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SCH13价格
参考价格:¥0.5850
型号:SCH1305 品牌:SANYO 备注:这里有SCH13多少钱,2025年最近7天走势,今日出价,今日竞价,SCH13批发/采购报价,SCH13行情走势销售排行榜,SCH13报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. | SANYO 三洋 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. | SANYO 三洋 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. | SANYO 三洋 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. • Halogen free compliance. | SANYO 三洋 | |||
P-Channel Power MOSFET 20V, ??.5A, 241m, Single SCH6 Features • Low ON-resistance • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET 20V, ??.5A, 241m, Single SCH6 Features • Low ON-resistance • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. • Halogen free compliance. | SANYO 三洋 | |||
P-Channel Power MOSFET 12V,3A, 84m Single SCH6 Features • Low ON-resistance • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET 12V,3A, 84m Single SCH6 Features • Low ON-resistance • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. • Halogen free compliance. | SANYO 三洋 | |||
P-Channel Power MOSFET Features • Low ON-resistance • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET Features • Low ON-resistance • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance | ONSEMI 安森美半导体 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • 1.8V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | |||
P-Channel Power MOSFET Features • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET Features • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • High-speed switching. • 1.8V drive. • Halogen free compliance. | SANYO 三洋 | |||
P-Channel Power MOSFET Features • Low ON-resistance • High-speed switching • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET Features • Low ON-resistance • High-speed switching • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • 1.8V drive • Halogen free compliance | SANYO 三洋 | |||
P-Channel Power MOSFET Features • 1.8V drive • Halogen free compliance | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET Features • 1.8V drive • Halogen free compliance | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=115mΩ(typ.) • 4V drive • Halogen free compliance | SANYO 三洋 | |||
Single P-Channel Power MOSFET Power MOSFET –30V, 150mΩ, –2A, Single P-Channel This Low-profile High-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or u | ONSEMI 安森美半导体 | |||
Single P-Channel Power MOSFET Power MOSFET –30V, 150mΩ, –2A, Single P-Channel This Low-profile High-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or u | ONSEMI 安森美半导体 | |||
Single P-Channel Power MOSFET Power MOSFET –30V, 150mΩ, –2A, Single P-Channel This Low-profile High-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or u | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=55mΩ(typ.) • 1.8V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:37.16 Kbytes Page:4 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:37.16 Kbytes Page:4 Pages | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications | ONSEMI 安森美半导体 | |||
P-Channel Silicon MOSFET General-Purpose Switching Device | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications 文件:291.85 Kbytes Page:4 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:291.85 Kbytes Page:4 Pages | SANYO 三洋 | |||
封装/外壳:SOT-563,SOT-666 包装:卷带(TR) 描述:MOSFET P-CH 12V 3A SCH6 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications 文件:481.09 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:481.09 Kbytes Page:7 Pages | SANYO 三洋 | |||
包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:INTEGRATED CIRCUIT 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ONSEMI 安森美半导体 | |||
P-Channel Power MOSFET 文件:381.71 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
General-Purpose Switching Device Applications 文件:490.34 Kbytes Page:7 Pages | SANYO 三洋 | |||
General-Purpose Switching Device Applications 文件:490.34 Kbytes Page:7 Pages | SANYO 三洋 | |||
P-Channel Power MOSFET 文件:381.71 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
Single P-Channel Power MOSFET 文件:546.17 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Single P-Channel Power MOSFET 文件:546.17 Kbytes Page:5 Pages | ONSEMI 安森美半导体 |
SCH13产品属性
- 类型
描述
- 型号
SCH13
- 制造商
Hubbell Wiring Device-Kellems
- 功能描述
WALLPLATE, 1-G, BLANK, CHR PLT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
23+ |
SCH6 |
50000 |
原装正品 支持实单 |
|||
SANYO/三洋 |
24+ |
SCH6 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON/安森美 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO/三洋 |
23+ |
SOT563 |
50000 |
全新原装正品现货,支持订货 |
|||
onsemi(安森美) |
24+ |
SCH-6 |
11318 |
支持大陆交货,美金交易。原装现货库存。 |
|||
SANYO/三洋 |
24+ |
SOT563 |
54000 |
郑重承诺只做原装进口现货 |
|||
25+ |
SOT |
996880 |
只做原装,欢迎来电资询 |
||||
SANYO/三洋 |
22+ |
SCH6 |
20000 |
公司只有原装 品质保障 |
|||
SANYO |
SOT363 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
SCH13规格书下载地址
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SCF6C60,当天发货0755-82732291全新原装现货或门市自取.
2020-8-30
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