Not Recommended For New Designs

Not Recommended For New Design \n The SC803 is a fully integrated, single cell, constant-current, constant-voltage Lithium-Ion battery charger management system. • Fully integrated charger with FET pass transistor, reverse-blocking diode, sense resistor and thermal protection\n• Complete voltage ranges of 4.1 V, 4.2 V, & adjustable\n• Programmable precharge, fastcharge & termination current\n• Battery voltage controlled to 1% accuracy\n• Soft-start for s;

Fully Integrated High Current Lithium-Ion Battery Charger System

文件：737.88 Kbytes Page：17 Pages

35秒128段OTP语音芯片SC8035B

SC8035B是一颗单芯片CMOS一次性编程语音芯片，使用最新崁入式EPROM架构的OTP (One Time Programmable)语音晶元，具有1个Input脚和 2个I/O脚，利用精准的内阻震荡故不需外加震荡电阻，只有一组PWM输出，故无须再加任何零件。语音合成方式为4-bit Advanced LOG-PCM,语音还原度高, 在6KHz采样频率最大可以录制35秒语音,两种控制方式,按键模式最大可以分128段语音,串行脉冲控制模式最大可以分127段.可将不同的语音资料写录进芯片ROM中.可应用在很多领域，例如：电子琴、高级玩具、儿童学习机、防盗设备、智能家电、保健与理疗产品、仪器仪表 (1) 可编程一次性烧录（OTP）语音芯片.\r\n(2) 语音长度可达35秒（6KHz采样率）.\r\n(3) PWM音频输出方式可直接驱动8欧0.5W喇叭或蜂鸣片.\r\n(4)内部集成时钟振荡器.\r\n(5)具有按键控制模式、MCU串行控制模式.\r\n(6)最大可存放1536个语音文件.\r\n(7)按键方式最多可加载128段语音；OKY、IO1、IO2分别指定 127、1、1段语音;串行控制模式最多支持127段语音.\r\n(8) 触发防抖时间：50us（串行）和10ms（按键）；\r\n(9)任一输入脚可分别选择 7种不同的触发方式组合；\r\n(10)支持播放不同采样率的语音文;

Fully Integrated High Current Lithium-Ion Battery Charger System

文件：737.88 Kbytes Page：17 Pages

Fully Integrated High Current Lithium-Ion Battery Charger System

文件：737.88 Kbytes Page：17 Pages

Fully Integrated High Current Lithium-Ion Battery Charger System

文件：737.88 Kbytes Page：17 Pages

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors