SILICON BIDIRECTIONAL THYRISTORS

Hermetic Triacs

Hermetic Triacs 6A to 40A RMS Up to 600 Volts

Hermetic Triacs

Hermetic Triacs 6A to 40A RMS Up to 600 Volts

Triacs Silicon Bidirectional Thyristors

High Performance Quad Output Switching Regulator

Description The SC2463 is a high performance controller for multi output converters that can be configured for a wide variety of applications. The SC2463 utilizes PWM synchronous buck topologies where efficiency is most important. It also provides two dedicated programmable positive linear regula

High Performance Quad Output Switching Regulator

Description The SC2463 is a high performance controller for multi output converters that can be configured for a wide variety of applications. The SC2463 utilizes PWM synchronous buck topologies where efficiency is most important. It also provides two dedicated programmable positive linear regula

High-Performance Quad-Output Switching Regulator

封装/外壳：28-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC REG QD BUCK/LNR SYNC 28TSSOP 集成电路（IC） 线性稳压器控制器

封装/外壳：28-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC REG QD BUCK/LNR SYNC 28TSSOP 集成电路（IC） 稳压器 - 线性 + 开关

高灵敏度全极性霍尔效应传感器

THYRISTOR

文件：206.51 Kbytes Page：3 Pages

THYRISTOR

文件：206.51 Kbytes Page：3 Pages

THYRISTOR

文件：206.51 Kbytes Page：3 Pages

THYRISTOR

文件：206.51 Kbytes Page：3 Pages

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PNP video transistor

DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B