SILICON GATE ENHANCEMENT MODE

General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. Polyfet process features low feedback and output capacitances, resulting in high Ft transistors w

FAST RECOVERY DIODE

Features ● Surface mount device ● High voltage by mesa design ● High reliability Applications ● High speed switching

触摸芯片

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES „ 316L Stainless steel top housing (standard) „ Available in wide range of wetted materials for process compatibility „ Flushing port (101, 201, 301) provides for easy cleaning of process „ Continuous duty design contains process if instrument is inadvertantly removed „ NSF-61 Compli

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES „ 316L Stainless steel top housing (standard) „ Available in wide range of wetted materials for process compatibility „ Flushing port (101, 201, 301) provides for easy cleaning of process „ Continuous duty design contains process if instrument is inadvertantly removed „ NSF-61 Compli

高度集成的USB PD控制器

通用厚膜电阻

Silicon Carbide Schottky Diode

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MINIATURE FUSES - 5x20mm

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Process control systems, instrumentation, rail vehicles

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Wiha Insulated Open-Ended Spanners

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M12-A Male 4 Pin Field Attachable

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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