SYNCHRONOUS PWM CONTROLLER WITH DUAL LOW DROPOUT REGULATOR CONTROLLERS

DESCRIPTION The SC1109 was designed for the latest high speed motherboards. It combines a synchronous voltage mode controller (switching section) with two low-dropout linear regulator controllers. The voltage mode controller provides the power supply for the system AGTL bus. The 1.8V and 2.5V l

同步PWM控制器的双低压差稳压器控制器

·Dual linear controllers\n·LDOs track input voltage within 200 mV (function of the MOSFETs used) until regulation\n·Integrated drivers\n·Power-good signal (SC1109A, SC1109B)\n·Soft start\n·Lossless current sense\n·Programmable over-current limit (SC1109C)\n·Fixed frequency 200 kHz (SC1109A, SC1109C);

SYNCHRONOUS PWM CONTROLLER WITH DUAL LOW DROPOUT REGULATOR CONTROLLERS

DESCRIPTION The SC1109 was designed for the latest high speed motherboards. It combines a synchronous voltage mode controller (switching section) with two low-dropout linear regulator controllers. The voltage mode controller provides the power supply for the system AGTL bus. The 1.8V and 2.5V l

SYNCHRONOUS PWM CONTROLLER WITH DUAL LOW DROPOUT REGULATOR CONTROLLERS

DESCRIPTION The SC1109 was designed for the latest high speed motherboards. It combines a synchronous voltage mode controller (switching section) with two low-dropout linear regulator controllers. The voltage mode controller provides the power supply for the system AGTL bus. The 1.8V and 2.5V l

Synchronous PWM Controller with Dual Low Dropout Regulator Controllers

文件：368.65 Kbytes Page：19 Pages

Synchronous PWM Controller with Dual Low Dropout Regulator Controllers

文件：368.65 Kbytes Page：19 Pages

Synchronous PWM Controller with Dual Low Dropout Regulator Controllers

文件：368.65 Kbytes Page：19 Pages

Synchronous PWM Controller with Dual Low Dropout Regulator Controllers

文件：368.65 Kbytes Page：19 Pages

Synchronous PWM Controller with Dual Low Dropout Regulator Controllers

文件：368.65 Kbytes Page：19 Pages

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Photo Interrupter

For contactless SW, object detection Outline ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to f

RECTIFIER DIODE

文件：166.81 Kbytes Page：4 Pages