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SC10-06

1A SILICON RECTIFIER CELL

FEATURES IDEAL FOR HYBRID CIRCUITS SOLDER MOUNTING SURFACES TYPICAL IR LESS THAN 1μA DIFFUSED JUNCTION HIGH SURGE CAPABILITY MOUNTING POSITION: ANY A4 PACKAGE, DIMENSION IN INCHES AND (MILLIMETERS) CELL DESIGNATION: A SUFFIX LETTER IS ADDED TO THE PRIMARY CELL DESIGNATI

FRONTIER

Gallium Arsenide Schottky Rectifier

Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Features GaAs Schottky Diode with Enhanced Barrier Height: • lowest operating forward voltage drop due to additional injection of minority carriers • high switching speed - low junctio

IXYS

艾赛斯

Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC

Features • Silicon Carbide Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current • ISOPLUS i4-PAC(TM) package

IXYS

艾赛斯

SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER SINGLE, 10 AMPS, 200 THRU 600 VOLTS

文件:95.54 Kbytes Page:2 Pages

CENTRAL

SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 10 AMPS, 200 THRU 600 VOLTS

文件:359.44 Kbytes Page:2 Pages

CENTRAL

Transformers Audio, elephone Coupling

文件:163.66 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

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