Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC

Features • Silicon Carbide Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current • ISOPLUS i4-PAC(TM) package

1~ Rectifier Bridges

·Blocking voltages: 800V - 1800V\n·Id(avg): 18A - 174A\n·Package with screw terminals. Space and weight savings\n·Isolation voltage 3000 V~. UL recognized\n·Planar passivated chips. Utilize DCB technology\n·Low forward voltage drop\n·Improved temperature and power cycling;

封装/外壳：ISOPLUSi5-Pak™ 包装：散装 描述：BRIDGE RECT 1P 600V 6.6A I4-PAC 分立半导体产品 二极管 - 桥式整流器

Gallium Arsenide Schottky Rectifier

Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Features GaAs Schottky Diode with Enhanced Barrier Height: • lowest operating forward voltage drop due to additional injection of minority carriers • high switching speed - low junctio

SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER SINGLE, 10 AMPS, 200 THRU 600 VOLTS

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SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 10 AMPS, 200 THRU 600 VOLTS

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Transformers Audio, elephone Coupling

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