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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SBT5551F | NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F | AUK |   | |
SBT5551F | NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F | KODENSHI 可天士 | | |
SBT5551F | General purpose amplifier 文件：265.08 Kbytes Page：4 Pages | KODENSHI 可天士 | | |
SBT5551F | Small Signal Transistors | AUK | | |
SBT5551F | NPN Silicon Transistor 文件：192.84 Kbytes Page：3 Pages | AUK | | |
NPN Silicon Transistor 文件：192.84 Kbytes Page：3 Pages | AUK | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |
SBT5551F产品属性
- 类型
描述
- 型号
SBT5551F
- 制造商
AUK
- 制造商全称
AUK corp
- 功能描述
NPN Silicon Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIG |
23+ |
SOT-523 |
50000 |
原装正品 支持实单 |
|||
AUK |
2026+ |
SOT-23 |
54648 |
百分百原装现货 实单必成 |
|||
24+ |
SOD523 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
SIG/一定原 |
16+ |
SOT-523 |
1628 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SIG |
23+ |
SOT-523 |
6000 |
专业配单保证原装正品假一罚十 |
|||
原装AUK |
19+ |
SOT-23 |
20000 |
原装现货假一罚十 |
|||
25+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
Bychip/百域芯 |
21+ |
SOT-523 |
30000 |
优势供应 品质保障 可开13点发票 |
|||
SIG |
16+ |
SOT-523 |
880000 |
明嘉莱只做原装正品现货 |
|||
SIGMAINDUCTORS |
2450+ |
SOT323 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
SBT5551F规格书下载地址
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DdatasheetPDF页码索引
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