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型号 功能描述 生产厂家 企业 LOGO 操作
SBS814

Low VF Schottky Barrier Diode 30V, 1.0A Rectifier

30V, 1.0A Rectifier Features • Small switching noise. • Low forward voltage (IF=1A, VF max=0.45V). • Ultrasmall package permitting applied sets to be small and slim. Applications • High frequency rectification (switching regulators, converters, choppers).

SANYO

三洋

SBS814

Low VF Schottky Barrier Diode 30V, 1.0A Rectifier

ONSEMI

安森美半导体

Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

VISHAYVishay Siliconix

威世威世科技公司

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

VISHAYVishay Siliconix

威世威世科技公司

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

PERKINELMER

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NEC

瑞萨

SBS814产品属性

  • 类型

    描述

  • 型号

    SBS814

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    Low VF Schottky Barrier Diode 30V, 1.0A Rectifier

更新时间:2026-5-20 15:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO
23+
VEC8
5000
原装正品,假一罚十

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