High Voltage Fast-Switching NPN Power Transistor

General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching mode power supply. Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A

80W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces

High Voltage Fast-Switching NPN Power Transistor

General Description This device is designed for high voltage, high speed switching char acteristic required such as lighting system, switching mode power supply. Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A

High Voltage Fast-Switching NPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA

High Voltage Fast-SwitchingNPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Features ◆ Very High Switching Speed ◆ Minimum Lot-to-Lot hFE Variation ◆ Wide Reverse Bias SOA ◆ Built-in free wheeling diode

High Voltage Fast-Switching NPN Power Transistor

General Description This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system. Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S.O.A

High Voltage Fast-Switching NPN Power Transistor

General Description This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply. Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse

High Voltage Fast-Switching NPN Power Transistor

General Description This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply. Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA

High Voltage Fast-Switching NPN Power Transistor

General Description This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply. Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA

High Voltage Fast-Switching NPN Power Transistor

General Description This devices is designed for high voltage, high speed switching characteristic,especially suitable for ballast sysytem. Features - High Switching Speed - Short storge time - Wide Reverse Bias S.O.A

High Voltage Fast-Switching NPN Power Transistor

General Description This devices is designed for high voltage, high speed switching characteristic,especially suitable for ballast sysytem. Features - High Switching Speed - Short storge time - Wide Reverse Bias S.O.A

High Voltage Fast-SwitchingNPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA

High Voltage Fast-Switching NPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply and inverters motor controls Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA

80W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces

80W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces

NPN Silicon Transistor

NPN Silicon Transistor for high voltage, high-speed power switching application

Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 8 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails

Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails FEATURES • Ideal for Elevating Devices (Displays, Switches, etc.) to Desired Level with 0.260 to 1.250 [6.60 to 31.75] Height Extension

Socket Outlets

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