Dual Low VF Schottky Barrier Rectifiers

Reverse Voltage 20 to 30 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

LOW VF SCHOTTKY ISOLATED PLASTIC RECTIFIER

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Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

Dual Low VF Common Cathode Schottky Rectifier

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTTKY 20V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTTKY 20V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/