SCHOTTKY RECTIFIER

Reverse Voltage - 20 and 25 Volts Forward Current - 25.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability ♦ Ve

Dual Low VF Schottky Barrier Rectifiers

Reverse Voltage 20 to 30 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

SCHOTTKY RECTIFIER

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：托盘 描述：DIODE ARRAY SCHOTTKY 20V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY SCHOTTKY 20V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/

2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

GENERAL DESCRIPTION The A25L20P/A25L10P/A25L05P are 2M/1M/512 bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4/2/