位置：首页 > IC中文资料第2850页 > SBL6040PT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SBL6040PT | 60A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 |   | |
SBL6040PT | Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | | |
SBL6040PT | Schottky Barrier Rectifier 文件：290.57 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SBL6040PT | 60A SCHOTTKY BARRIER RECTIFIER 文件：74.88 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
SBL6040PT | 封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 40V TO3P 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | | |
SBL6040PT | Schottky | DIODES 美台半导体 | | |
萧特基 (Schottky)(.5A 和以上) | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | |
SBL6040PT产品属性
- 类型
描述
- 型号
SBL6040PT
- 功能描述
肖特基二极管与整流器 60A 40V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES美台 |
1136+ |
TO-247 |
540 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LT |
TO-247 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
LINEAR/凌特 |
24+ |
NA/ |
7500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
LITEON/光宝 |
25+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
LT |
25+23+ |
TO-3P |
15637 |
绝对原装正品全新进口深圳现货 |
|||
SBL |
25+ |
TO-3P |
18000 |
原厂直接发货进口原装 |
|||
25+ |
TO3P |
2568 |
原装优势!绝对公司现货 |
||||
LT |
24+ |
TO-3P |
12000 |
原装正品真实现货杜绝虚假 |
|||
LTN |
05+ |
原厂原装 |
19751 |
只做全新原装真实现货供应 |
|||
DIODES美台 |
17+ |
TO-247 |
6200 |
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SBL6040PT规格书下载地址
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SBL6040PT数据表相关新闻
SBC8-221-182
www.58chip.com
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