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SBL6030PT

60A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

DIODES

美台半导体

SBL6030PT

Low VF Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec

SIRECTIFIER

矽莱克电子

SBL6030PT

SCHOTTKY BARRIER RECTIFIER

文件:339.33 Kbytes Page:2 Pages

DSK

SBL6030PT

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 30V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

SBL6030PT

Schottky

DIODES

美台半导体

SBL6030PT

60A SCHOTTKY BARRIER RECTIFIER

文件:74.88 Kbytes Page:3 Pages

DIODES

美台半导体

60A SCHOTTKY BARRIER RECTIFIER

文件:74.88 Kbytes Page:3 Pages

DIODES

美台半导体

60A SCHOTTKY BARRIER RECTIFIER

文件:72.13 Kbytes Page:3 Pages

DIODES

美台半导体

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO

STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes)

文件:230.18 Kbytes Page:2 Pages

RECTRON

丽正

SBL6030PT产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    Standard

  • Configuration:

    Dual

  • MaximumAverageRectifiedCurrent IO (A):

    60 A

  • @ TerminalTemperature TT (ºC):

    100 ºC

  • Peak RepetitiveReverse VoltageVRRM (V):

    30 V

  • Peak ForwardSurge CurrentIFSM (A):

    500 A

  • Forward Voltage Drop VF (V):

    0.55 V

  • @ IF (A):

    30 A

  • Maximum ReverseCurrent IR (µA):

    20000 µA

  • @ VR (V):

    30 V

  • TotalCapacitance CT (pF):

    1500 pF

  • Packages:

    TO-3P

更新时间:2026-8-1 16:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
TO-3P
21574
郑重承诺只做原装进口现货
DIODES/美台
22+
TO-3P
20000
只做原装 品质保障
Diodes
22+
TO3P
9000
原厂渠道,现货配单
DIODES
25+23+
TO-3P
33286
绝对原装正品全新进口深圳现货
DIODES/美台
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Diodes
23+
TO3P
8000
只做原装现货
Diodes
23+
TO3P
7000
DIODES/美台
21+
TO-3P
5195
DIODES
23+
TO-247
12800
公司只有原装 欢迎来电咨询。
DIODES
24+
TO-3P
65200
一级代理/放心采购

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