SCHOTTKY RECTIFIER

Reverse Voltage - 30 to 40 Volts Forward Current - 40.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon rectifier, majority carrier conduction ♦ Low power los

40A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

Low VF Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec

Dual Common-Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Material categorization: For definitions of compliance please see www.vishay.

Dual Common Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Material categorization: for definitions of compliance please see www.vishay

Power Schottky Rectifier - 40Amp 30Volt

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SCHOTTKY BARRIER RECTIFIERS

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Dual Common Cathode Schottky Rectifier

文件：83.76 Kbytes Page：5 Pages

40A SCHOTTKY BARRIER RECTIFIER

文件：71.24 Kbytes Page：3 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 30V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

40A SCHOTTKY BARRIER RECTIFIER

Dual Common Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Material categorization: for definitions of compliance please see www.vishay

Dual Common-Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Material categorization: For definitions of compliance please see www.vishay.

Dual Common-Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Material categorization: For definitions of compliance please see www.vishay.

Dual Common Cathode Schottky Rectifier

Dual Common Cathode Schottky Rectifier

40A SCHOTTKY BARRIER RECTIFIER

文件：71.24 Kbytes Page：3 Pages

40A SCHOTTKY BARRIER RECTIFIER

文件：67.87 Kbytes Page：3 Pages

Dual Common Cathode Schottky Rectifier

文件：83.76 Kbytes Page：5 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 30V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res