20A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec

Schottky Barrier Rectifier

FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte

Low VF Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap

SCHOTTKY BARRIER RECTIFIER

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

LOW VF SCHOTTKY BARRIER RECTIFIERS

Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction

SCHOTTKY BARRIER RECTIFIER

文件：242.09 Kbytes Page：2 Pages

封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 60V 20A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

萧特基 (Schottky)(.5A 和以上)

SCHOTTKY BARRIER RECTIFIER

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20A SCHOTTKY BARRIER RECTIFIER

文件：76.74 Kbytes Page：3 Pages

20A SCHOTTKY BARRIER RECTIFIER

文件：70.12 Kbytes Page：3 Pages

20A SCHOTTKY BARRIER RECTIFIER

文件：374.09 Kbytes Page：5 Pages

20A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 60 Volts Forward Current - 20 Amperes FEATURES * Halogen-free type * Compliance to RoHS produc * Low power loss & high efficiency * High surge capability * 20 Amperes total (10 Amperes per diode leg) * High surge current capability * Epitaxial constr

20A SCHOTTKY BARRIER RECTIFIER

文件：374.09 Kbytes Page：5 Pages

封装/外壳：TO-220-3 隔离片 包装：散装 描述：DIODE ARRAY SCHOTTKY 60V ITO220S 分立半导体产品 二极管 - 整流器 - 阵列

20A SCHOTTKY BARRIER RECTIFIER

20A SCHOTTKY BARRIER RECTIFIER

文件：176.33 Kbytes Page：4 Pages

TO-220 / ITO-220 Schottky Barrier Rectifies

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

QUAD OPERATIONAL AMPLIFIER?

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QUAD OPERATIONAL AMPLIFIER?

文件：231.91 Kbytes Page：6 Pages