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SBL10价格
参考价格：￥3.3399
型号：SBL1040CT-E3/45 品牌：Vishay 备注：这里有SBL10多少钱，2025年最近7天走势，今日出价，今日竞价，SBL10批发/采购报价，SBL10行情走势销售排行榜，SBL10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage • High surge capacity • High Current Capability | MCC |   | ||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro | BILIN 银河微电 | | ||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro | LUGUANG 鲁光电子 | | ||
LOW VF SCHOTTKY BARRIER RECTIFIERS Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
LOW VF SCHOTTKY BARRIER RECTIFIERS Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage • High surge capacity • High Current Capability | MCC | | ||
10A SCHOTTKY BARRIER RECTIFIER Features ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● Very Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ● Plastic Material: UL | DIODES 美台半导体 | | ||
10 Amp Schottky Barrier Rectifier 25 to 30 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage • High surge capacity • High Current Capability | MCC | | ||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | | ||
Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 10.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low f | GE | | ||
10A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | DIODES 美台半导体 | | ||
10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage • High surge capacity • High Current Capability | MCC | | ||
Schottky Barrier Rectifiers Reverse Voltage 30 to 40 Volts Forward Current 10.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | | ||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro | BILIN 银河微电 | | ||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | | ||
Schottky Barrier Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur | VishayVishay Siliconix 威世威世科技公司 | | ||
LOW VF SCHOTTKY BARRIER RECTIFIERS Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
10A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect | DIODES 美台半导体 | | ||
Schottky Barrier Rectifiers Reverse Voltage 30 to 40 Volts Forward Current 10.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | | ||
Low VF Schottky Barrier Rectifiers [Sirectifier®] FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Low VF Schottky Barrier Rectifiers Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inver | SIRECTIFIER 矽莱克电子 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro | LUGUANG 鲁光电子 | | ||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur | VishayVishay Siliconix 威世威世科技公司 | | ||
10A SCHOTTKY BARRIER RECTIFIER Features ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● Very Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ● Plastic Material: UL | DIODES 美台半导体 | | ||
10 Amp Schottky Barrier Rectifier 25 to 30 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage • High surge capacity • High Current Capability | MCC | | ||
10A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | DIODES 美台半导体 | | ||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | | ||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro | BILIN 银河微电 | | ||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | | ||
10A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect | DIODES 美台半导体 | | ||
Low VF Schottky Barrier Rectifiers [Sirectifier®] FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Low VF Schottky Barrier Rectifiers Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inver | SIRECTIFIER 矽莱克电子 | | ||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro | LUGUANG 鲁光电子 | | ||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | | ||
10A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | DIODES 美台半导体 | | ||
SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 10.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low f | GE | | ||
Schottky Barrier Rectifiers Reverse Voltage 30 to 40 Volts Forward Current 10.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | | ||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | | ||
SCHOTTKY BARRIER RECTIFIER FEATURES · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | TEL | | ||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro | BILIN 银河微电 | | ||
SCHOTTKY BARRIER DIODE FEATURES ● Common cathode structure ● Low power loss, high efficiency ● High Operating Junction Temperature ● Guard ring for overvoltage protection， High reliability ● RoHS product APPLICATIONS ● High frequency switch power supply ● Free wheeling diodes, polarity protecti | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | | ||
10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage • High surge capacity • High Current Capability | MCC | | ||
Schottky Barrier Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatur | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC SBL1040 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop, high current capability and high efficiency, etc. The UTC SBL1040 is suitable for free wheeling, high frequency inverters, low voltage and polari | UTC 友顺 | | ||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | | ||
SCHOTTKY BARRIER RECTIFIER FEATURES · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | WINNERJOIN 永而佳 | | ||
Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO | VishayVishay Siliconix 威世威世科技公司 | | ||
10A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect | DIODES 美台半导体 | | ||
Schottky Barrier Rectifiers Reverse Voltage 30 to 40 Volts Forward Current 10.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi | Good-Ark 固锝电子 | | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 40 to 60 Volts Forward Current - 10 Amperes FEATURES * Lead free product * Low forward voltage drop * High current capacity * High reliability * High surge current capability * Epitaxial construction * Plastic Material-UL Recognition Flammability Classif | ZOWIE 智威 | |
SBL10产品属性
- 类型
描述
- 型号
SBL10
- 制造商
BILIN
- 制造商全称
Galaxy Semi-Conductor Holdings Limited
- 功能描述
SCHOTTKY BARRIER RECTIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
23+ |
TO-220-2 |
200 |
全新原装正品现货,支持订货 |
|||
DIODES |
25+23+ |
TO220 |
33287 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
23+ |
TO-220AC |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
CJ/长电 |
24+ |
TO-220A |
50000 |
全新原装,一手货源,全场热卖! |
|||
LT/凌特 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
DIODES/美台 |
23+ |
TO-220-2 |
50000 |
全新原装正品现货,支持订货 |
|||
Diodes |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
DIODES |
TO220 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
24+ |
20000 |
||||||
DIODES/美台 |
21+ |
TO-220-2 |
10000 |
原装现货假一罚十 |
SBL10规格书下载地址
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- SBH-9V-BK
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- SBH51-LPSE-D36-ST-BK
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- SBH51-LPSE-D25-SP-BK
- SBH51-LPSE-D20-ST-BK
- SBH51-LPSE-D20-SP-BK
- SBH51-LPSE-D15-ST-BK
- SBH51-LPSE-D15-SP-BK
- SBH51-LPSE-D13-ST-BK
- SBH51-LPSE-D13-SP-BK
- SBH51-LPSE-D10-ST-BK
- SBH51-LPSE-D10-SP-BK
- SBH51-LPSE-D07-ST-BK
- SBH51-LPSE-D07-SP-BK
- SBH51-LPSE-D06-ST-BK
- SBH3060
- SBH3050
- SBH3045
- SBH3040
- SBH3030
SBL10数据表相关新闻
SBB5089Z
进口代理
2023-3-21SBC8-221-182
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