NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管 - 双极结型晶体管(BJT) SBN SSP SOT223 NPN

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管 - 双极结型晶体管(BJT) SS GP XSTR NPN 80V

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • AEC-Q101 qual

80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified acc

NPN MEDIUM POWER TRANSISTOR

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45V/60V/80V, 1A NPN medium power transistors

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