型号 功能描述 生产厂家 企业 LOGO 操作
SBAS40LT3G

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features

ONSEMI

安森美半导体

SBAS40LT3G

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features

ONSEMI

安森美半导体

SBAS40LT3G

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Featu

ONSEMI

安森美半导体

SBAS40LT3G

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:DIODE SCHOTTKY 40V 120MA SOT23-3 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features

ONSEMI

安森美半导体

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features

ONSEMI

安森美半导体

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Featu

ONSEMI

安森美半导体

SCHOTTKY BARRIER DIODE

DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. Features ● Low forward current ● Guard ring protected ● Low diode capacitance. ● S- Prefix for Automotive and Other Appl

LRC

乐山无线电

SCHOTTKY BARRIER DIODE Low forward current

文件:99.92 Kbytes Page:4 Pages

LRC

乐山无线电

更新时间:2025-11-3 17:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
onsemi(安森美)
24+
SOT23(TO236)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ON/安森美
22+
SOT-23
9000
原装正品,支持实单!
ONSEMI
2450+
SOT23-3
18500
只做原厂原装正品终端客户免费申请样品
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON/安森美
25+
电联咨询
7800
公司现货,提供拆样技术支持
三年内
1983
只做原装正品
ON/安森美
22+
24000
原装正品现货,实单可谈,量大价优
ON Semiconductor
23+
SOT233 (TO236)
8000
只做原装现货
ON
2447
C0603
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

SBAS40LT3G数据表相关新闻