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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LBAS40LT3G | SCHOTTKY BARRIER DIODE DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. Features ● Low forward current ● Guard ring protected ● Low diode capacitance. ● S- Prefix for Automotive and Other Appl | LRC 乐山无线电 | ||
LBAS40LT3G | 丝印代码:CB;Schottky BARRIER DIODE DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. Features ● Low forward current ● Guard ring protected ● Low diode capacitance. APPLICATIONS ● Ultra high-speed switchin | LEIDITECH 雷卯电子 | ||
LBAS40LT3G | SCHOTTKY BARRIER DIODE Low forward current 文件:99.92 Kbytes Page:4 Pages | LRC 乐山无线电 | ||
Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features | ONSEMI 安森美半导体 | |||
Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features | ONSEMI 安森美半导体 | |||
Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features | ONSEMI 安森美半导体 | |||
Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features | ONSEMI 安森美半导体 |
LBAS40LT3G产品属性
- 类型
描述
- 型号
LBAS40LT3G
- 制造商
LRC
- 制造商全称
Leshan Radio Company
- 功能描述
SCHOTTKY BARRIER DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LS/LG |
2450+ |
6540 |
只做原厂原装现货或订货假一赔十! |
||||
CLARE |
25+ |
DIPSOP |
20000 |
全新原装正品支持含税 |
|||
CPClare |
1998 |
DIP-8P |
444 |
原装现货海量库存欢迎咨询 |
|||
CLARE |
17+ |
DIP-8 |
6200 |
||||
CPCLARE |
09+ |
SMD |
5514 |
只售全新原装货实数现货放心查询 |
|||
24+ |
SMD |
5000 |
|||||
CLARE |
23+ |
DIPSOP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CLARE |
25+ |
DIP8 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
CLARE |
24+ |
DIP |
4652 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
26+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
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LBAS40LT3G规格书下载地址
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DdatasheetPDF页码索引
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