8.0A DUAL SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring for Transient Protection • Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Current Capability • Plastic Material has UL Flammability Classification 94V-O

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surg

ISOLATION SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters laboratory Flammability Classification 94V-0 utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MILS-19500 / 228 • Low power loss, high efficiency • Low forward voltage. high current capability • High sur

8.0A DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

文件：92.47 Kbytes Page：2 Pages

功率肖特基二极管(IF ≧ 1A)

ISOLATION SCHOTTKY BARRIER RECTIFIERS

文件：1.38565 Mbytes Page：4 Pages

ISOLATION SCHOTTKY BARRIER RECTIFIERS

文件：428.63 Kbytes Page：2 Pages

8.0A DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

ISOLATION SCHOTTKY BARRIER RECTIFIERS

文件：428.63 Kbytes Page：2 Pages

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

文件：92.47 Kbytes Page：2 Pages

SCHOTTKY BARRIER RECTIFIER

文件：154.03 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIER

文件：154.03 Kbytes Page：4 Pages

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature