40 Ampere low vf Schottky diode

Features Low Forward Voltage Drop Reliable High Temperature Operation Softest, Fast Switching Capability 150℃ Operating Junction Temperature Lead Free Finish, RoHS Compliant Typical Applications Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut

JST PH 4-Pin Socket to Color Coded Cable - 200mm

文件：1.30238 Mbytes Page：4 Pages

800 TO 4000 MHz TO-8 CASCADABLE AMPLIFIER

文件：179.68 Kbytes Page：2 Pages

STM32F3 series in-application programming

文件：391.96 Kbytes Page：16 Pages