SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

40A DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

40A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 250A Peak Low Power Loss, High Efficiency Fast Switching For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Switching Power Supplies

40A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 250A Peak Low Power Loss, High Efficiency Fast Switching For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Switching Power Supplies

40A DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

DUAL LOW VF SCHOTTKY RECTIFIER

FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives

40 Ampere low vf Schottky diode

Features Low Forward Voltage Drop Reliable High Temperature Operation Softest, Fast Switching Capability 150℃ Operating Junction Temperature Lead Free Finish, RoHS Compliant Typical Applications Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply

40 Ampere low vf Schottky diode

Features Low Forward Voltage Drop Reliable High Temperature Operation Softest, Fast Switching Capability 150℃ Operating Junction Temperature Lead Free Finish, RoHS Compliant Typical Applications Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply

SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 outilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss. High efficiency • Low fower voltage, high current capability • High surg

Schottky Rectifiers

SCHOTTKY BARRIER RECTIFIER

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Schottky Rectifiers

低压降肖特基二极管

LOW VF SCHOTTKY BARRIER RECTIFIER

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Toroidal Surface Mount Inductors

DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting

Active Optical Cable QSFP 40Gbps, 100m, MSA Compatible

Features • Full-Duplex 4 channel parallel active optical cable, supporting 42 Gbps links • Up to 10.5 Gbps Data rate per channel • Maximum link length of 100m available • High Reliability 850nm VCSEL technology • Electrically hot-puggable • Electrical interface compliant to SFF-8431 • Case

CMOS 32-Stage Static Left/Right Shift Register

Description CD40100BMS is a 32-Stage shift register containing 32 D-type master-slave flip-flops. The data present at the SHIFT RIGHT INPUT is transferred into the first register stage synchronously with the positive CLOCK edge, provided the LEFT/RIGHT CONTROL is at a low level, the RECIRCUL

100 W, DC - 3.0 GHz, 50 V, GaN HEMT

Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high g

Toroidal Surface Mount Inductors

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