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型号 功能描述 生产厂家 企业 LOGO 操作
SB352W

High Current 15 25 35 AMPS Single Phase Bridge Rectifiers

Features ◇ UL Recognized File # E-96005 ◇ Glass passivated junction ◇ Metal case with an electrically isolated epoxy ◇ Rating to 1,000V PRV. ◇ High efficiency ◇ Mounting: thru hole for #8 screw ◇ High temperature soldering guaranteed: 260℃ / 10 seconds at 5 lbs., ( 2.3 kg ) tension ◇ Leads

TSC

台湾半导体

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

ONSEMI

安森美半导体

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

NTE

Square Type

文件:31.46 Kbytes Page:1 Pages

PANASONIC

松下

Square Type

文件:32 Kbytes Page:1 Pages

PANASONIC

松下

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件:140.77 Kbytes Page:9 Pages

TI

德州仪器

SB352W产品属性

  • 类型

    描述

  • 型号

    SB352W

  • 功能描述

    桥式整流器 35A 200V

  • RoHS

  • 制造商

    Vishay

  • 产品

    Single Phase Bridge

  • 峰值反向电压

    1000 V 最大 RMS

  • 正向连续电流

    4.5 A

  • 最大浪涌电流

    450 A

  • 正向电压下降

    1 V

  • 最大反向漏泄电流

    10 uA

  • 最大工作温度

    + 150 C

  • 长度

    30.3 mm

  • 宽度

    4.1 mm

  • 高度

    20.3 mm

  • 安装风格

    Through Hole

  • 封装/箱体

    SIP-4

  • 封装

    Tube

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