Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of comp

3.0A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

Schottky Barrier Rectifiers

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Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?999

Dual channel programmable angle sensor IC

Switch-mode Power Rectifier

Features • Ultrafast 35 Nanosecond Recovery Time • Low Forward Voltage Drop • Low Leakage • NRVUD, SURD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Complia

Blind cover for appliance outlets

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