Schottky Barrier Rectifiers

Schottky Barrier Rectifier Diodes • Nominal current 2 A • Repetitive peak reverse voltage 20...100 V • Plastic case DO-15 • Weight approx. 0.4 g • Plastic material has UL cla

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Amperes Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound • 2.0 ampere operation at TL=75 with no thermal runaway • For use i

Schottky Barrier Rectifiers Schottky Barrier Rectifiers

Reverse Voltage 20 to 100V Feature & Dimensions * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss, high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications * Guarding for ov

Schottky barrier rectifiers diodes

Forward Current: 2 A Reverse Voltage: 20 to 100 V Features • Max. solder temperature : 260°C • Plastic material has UL classification 94V-0 Mechanical Data • Plastic case DO-15 / DO-204AC • Weight approx.: 0,4 g • Terminals: plated terminals solcderable per MIL-STD-750 • Mounting posi

2.0AMPS. SCHOTTKY BARRIER RECTIFIERS

FEATURE • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed 260°C /10sec/ 0.375 lead length at 5 lbs tension

Schottky Barrier Rectifiers

Reverse Voltage 70V to 100V Forward Current 2.0 Amperes Features • Metal semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic material carries UL recognition 94V-0 • For use in low voltage, high fr

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● High forward surge current

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 70 TO 100V CURRENT: 2.0A

VOLTAGE: 70 TO 100V CURRENT: 2.0A FEATURE • High current capability, Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • 250°C /10sec/0.375 lead length at 5 lbs tension

Schottky Diodes

■ Features ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● High forward surge current capability

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency ♦ High forward surge current

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead l

SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 20 - 100 Volts IO : 2.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low cost * Low forward voltage drop

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency ♦ High forward surge current

SCHOTTKY BARRIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead l

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 2.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency ♦ High forward surge current

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 70 --- 100 V CURRENT: 2.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pr

SCHOTTKY BARRIER RECTIFIERS

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead l

SCHOTTKY BARRIER RECTIFIERS

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Schottky Diodes

SCHOTTKY BARRIER RECTIFIER

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Schottky barrier rectifiers diodes

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SCHOTTKY BARRIER RECTIFIER DIODES

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SCHOTTKY BARRIER RECTIFIER DIODES

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Schottky Barrier Rectifiers

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Schottky Barrier Rectifier Diodes

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Schottky Barrier Rectifier Diodes

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Schottky Barrier Rectifier Diodes

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High Voltage Transistor

High Voltage Transistor

STANDARD SHAFT SEALS

DESCRIPTION The SB2 profile is a shaft seal composed of a single external metal cage and a primary sealing lip with integrated spring. APPLICATIONS Shaft sealing Engines Pumps Transmissions

Schottky Barrier Rectifiers

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High Voltage Transistor

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 400V 0.3A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SCHOTTKY BARRIER RECTIFIER DIODES

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SCHOTTKY BARRIER RECTIFIER DIODES

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Schottky Barrier Rectifiers

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low power dual operational amplifi

DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow

Silicon Complementary Transistors Audio Power Amplifier, Switch

Applications: • 1W Audio Power Amplifier Applications • Switching Applications

Silicon Complementary Transistors Audio Power Amplifier

Features: ● High Breakdown Voltage: V(BR)CEO = 80V Min ● High Current: IC = 500mA ● Low Saturation Voltage

Burst Mode Memory Controller

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