Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of comp

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in ac

2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

2.0A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Schottky Barrier Rectifier

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Schottky Barrier Plastic Rectifier

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SCHOTTKY BARRIER RECTIFIER DIODES

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SCHOTTKY BARRIER RECTIFIER DIODES

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2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

2.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

MINIATURE FUSES - 5x20 mm

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5x20 mm MINIATURE FUSES

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Modular Radio Telemetry System

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1/4 FLAT PLUG PHONE PLUGS

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