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SB1100E-G价格

参考价格:¥0.3857

型号:SB1100E-G 品牌:Comchip 备注:这里有SB1100E-G多少钱,2026年最近7天走势,今日出价,今日竞价,SB1100E-G批发/采购报价,SB1100E-G行情走势销售排行榜,SB1100E-G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SB1100E-G

Low VF/ESD Leaded Schottky Barrier Rectifiers

文件:457 Kbytes Page:2 Pages

COMCHIP

典琦

SB1100E-G

封装/外壳:DO-204AL,DO-41,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 100V 1A DO41 分立半导体产品 二极管 - 整流器 - 单

COMCHIP

典琦

SB1100E-G

Schottky Barrier Rectifiers Diodes

COMCHIP

典琦

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

MOSPEC

统懋

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

SB1100E-G产品属性

  • 类型

    描述

  • IFSM(A):

    30

  • IF(A):

    1

  • VF(V):

    0.85

  • IR(uA):

    500

  • Status:

    Active

  • 封裝型式:

    DO-41

更新时间:2026-7-31 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
-
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
SANYO/三洋
23+
TO262
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SANYO
SOT-89
68500
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HEYC
25+
NA
398
专做原装正品,假一罚百!
ON/安森美
22+
SOT-23
20000
只做原装
SAN
24+
TO-220
16800
绝对原装进口现货 假一赔十 价格优势!?
SANYO
25+
TO-263
4500
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24+
DIP18
3000
自己现货
ALPHA
17+
SOT23
6200
100%原装正品现货
onsemi(安森美)
26+
-
16000
原装认证库存更多原厂可发

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