Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of comp

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C Operating Temperature • Fast switching and ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION

Power MOSFET

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Power MOSFET

文件：791.72 Kbytes Page：9 Pages