Miniature Schottky Barrier Rectifiers

Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound ● 1.0 ampere operation at TL=90 with no thermal runaway ● For use in low voltage, high frequency inverters free wheeling, and polarity protection application

Miniature Schottky Barrier Rectifier

FEATURES ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● Low forward voltage drop ● High frequency operation ● Solder dip 275 °C max. 10 s, per JESD 22-B106 ● Material categorization: For definitions of compliance    please see www.vishay.

SpectraBright Series 0603 Package Size SMD Bi-Color LEDs

Space-Saving, Multi-Status Indication and Multicolor/Brightness Options Enhance Design Possibilities. Key Features • Package size 0603 • Tape and reel packaged for high-speed auto insertion • Through-hole, SMD • Clear lens • Bi-color: Red/Green • Enjoy high visibility in a range of worki

SpectraBright Series 0606 Package Size SMD RGB and Bi-Color LEDs

Key Features • Package size 0606 • Tape and reel packaged for high-speed auto insertion • Through-hole, SMD • Clear lens • Tri-color: RGB • Bi-color: Red/Green • Enjoy high visibility in a range of working environments thanks to a wide, 120° viewing angle • High and low intensity options a

SpectraBright Series 0606 Package Size SMD RGB and Bi-Color LEDs

Key Features • Package size 0606 • Tape and reel packaged for high-speed auto insertion • Through-hole, SMD • Clear lens • Tri-color: RGB • Bi-color: Red/Green • Enjoy high visibility in a range of working environments thanks to a wide, 120° viewing angle • High and low intensity options a

SpectraBright Series 0606 Package Size SMD RGB and Bi-Color LEDs

Key Features • Package size 0606 • Tape and reel packaged for high-speed auto insertion • Through-hole, SMD • Clear lens • Tri-color: RGB • Bi-color: Red/Green • Enjoy high visibility in a range of working environments thanks to a wide, 120° viewing angle • High and low intensity options a

Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 2 Amp, 0.32VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

Schottky cr Barrier Diode Wafer

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

Schottky cr Barrier Diode Wafer 65 Mils, 40 Volt, 3 Amp, 0.39VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

Miniature Schottky Barrier Rectifier

文件：71.14 Kbytes Page：4 Pages

Miniature Schottky Barrier Plastic Rectifier

文件：78.17 Kbytes Page：5 Pages

发光二极管/LED

发光二极管/LED

Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF.

封装/外壳：MPG06，轴向 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 600MA MPG06 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：MPG06，轴向 包装：带盒（TB） 描述：DIODE SCHOTTKY 60V 600MA MPG06 分立半导体产品 二极管 - 整流器 - 单