Silicon Epitaxial Planar Transistor

FEATURES ● Complementary To S9015W. ● Excellent HFE Linearity. ● Power dissipation.(PC=0.2W) APPLICATIONS ● Per-Amplifier low level & low noise.

TRANSISTOR(NPN)

TRANSISTOR (NPN) FEATURES ● Complementary to S9015W ● Small Surface Mount Package

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to S9015W ● Small Surface Mount Package

Plastic Encapsulated Transistor

FEATURE Complementary to S9015W PACKAGING INFORMATION Weight: 0.0074 g

SOT-323 Plastic-Encapsulate Transistors

FEATURES Complementary to S9015W Small Surface Mount Package

Silicon Epitaxial Planar Transistor

FEATURES ● Complementary To S9015W. ● Excellent HFE Linearity. ● Power dissipation.(PC=0.2W) APPLICATIONS ● Per-Amplifier low level & low noise.

Plastic-Encapsulate Transistors

FEATURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W)

晶体三极管

50V，100MA，NPN Transistor

NPN小信号三极管

Plastic Encapsulated Transistor

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Silicon Epitaxial Planar Transistor

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Silicon Epitaxial Planar Transistor

文件：173.59 Kbytes Page：4 Pages

Plastic Encapsulated Transistor

文件：269.19 Kbytes Page：2 Pages

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015