NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.4Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 50V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9014 • Lead Free Finish/RoHS Compliant (P Suffix des

NPN Silicon Transistors

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 45V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS NPN 45V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015