PNP General Purpose Transistors

PNP General Purpose Transistors Pb Lead(Pb)-Free

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

■ DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. ■ FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050 * Halogen Fre

4 횞 8 element APD array with low noise and enhanced short-wavelength sensitivity

S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element. Features ● High sensitivity and low noise in short wavelength region ● Low terminal c

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S8050. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

Plastic-Encapsulate Transistors

FEATURES Complimentary to S8050 Collector Current: IC=0.5A

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complimentary to S8050 ● Collector current: IC=0.5A

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO: -40 V

TRANSISTOR(PNP)

FEATURES ● Complimentary to S8050 ● Collector current: IC=0.5A

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complimentary to S8050 ● Collector current: IC=0.5A

TRANSISTOR (PNP)

FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S8050. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

Plastic-Encapsulate Transistors

FEATURES Complimentary to S8050 Collector current: IC=0.5A

PNP Transistors

Features ● Collector current: IC-=0.5A

STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS

The S-8550 Series is a CMOS synchronous rectification step-down switching regulator which mainly consists of a reference voltage circuit, an oscillator, an error amplifier, a phase compensation circuit, a PWM controller, an under voltage lockout circuit (UVLO), a current limit circuit, and a power

Silicon Epitaxial Planar Transistor

FEATURES • High Collector Current.(IC= -500mA） • Complementary To S8050. • Excellent HFE Linearity. APPLICATIONS • High Collector Current.

Low Frequency Power Amplifier

■ FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to S8050

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High PC and IC, complementary pair with S8050. Applications Amplifier of portable radios in class B push-pull operation.

PNP EPITAXIAL SILICON TRANSISTOR

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S8050. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

TRANSISTOR

FEATURES ● Complimentary to S8050 ● Collector current: IC=0.8A

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA). ● Complementary To S8050. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

High current capacity in compact package

FEATURE ● High current capacity in compact package. ● Epitaxial planar type. ● PNP complement: L8550H ƽ We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation.

TRANSISTOR(PNP)

FEATURES Complimentary to S8050 Collector current: IC=0.5A

SOT-23 Plastic-Encapsulate Transistors

FEATURES Complimentary to S8050 Collector current: IC=0.5A

TRANSISTOR (PNP)

FEATURES Complimentary to S8050 Collector current: IC=0.5A

Silicon Epitaxial Planar Transistor

FEATURES High Collector Current.(IC= -500mA). Complementary To S8050. Excellent HFE Linearity. APPLICATIONS High Collector Current

Plastic-Encapsulate Transistors

FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Small and medium-sized power amplifier, medium power drive and switching applications

文件：164.85 Kbytes Page：3 Pages

PNP小信号三极管

晶体管

Transistor

Plastic-Encapsulate Transistors

文件：497.69 Kbytes Page：2 Pages

PNP Plastic-Encapsulate Transistors

文件：1.22759 Mbytes Page：5 Pages

Silicon Epitaxial Planar Transistor

文件：314.09 Kbytes Page：4 Pages

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

文件：138.86 Kbytes Page：4 Pages

PNP Transistors

Features ● Collector current: IC-=0.5A

PNP Transistors

Features ● Collector current: IC-=0.5A

PNP Transistors

Features ● Collector current: IC-=0.5A

HIGH VOLTAGE TRANSISTOR: (PNP)

FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW（Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V

General Purpose Transistor

FEATURES ● Excellent hFE linearity

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

文件：138.86 Kbytes Page：4 Pages

Silicon Epitaxial Planar Transistor

文件：314.09 Kbytes Page：4 Pages

Plastic-Encapsulate Transistors

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LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

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multi mode

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Silicon PNP transistor in a TO-92 Plastic Package

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Low Frequency Power Amplifier

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PNP Silicon Transistors

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PNP Silicon Transistors

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PNP Silicon Transistors

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PNP Silicon Transistors

文件：218.15 Kbytes Page：2 Pages

PNP Silicon Transistors

文件：176.01 Kbytes Page：2 Pages

PNP Silicon Transistors

文件：218.15 Kbytes Page：2 Pages

PNP Silicon Transistors

文件：218.15 Kbytes Page：2 Pages

PNP Silicon Transistors

文件：199.7 Kbytes Page：2 Pages

PNP Silicon Transistors

文件：176.01 Kbytes Page：2 Pages

PNP Silicon Transistors

文件：218.15 Kbytes Page：2 Pages

PNP Silicon Transistors

文件：218.15 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS PNP 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个