三极管

PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

通用三极管

三极管(BJT)

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

文件：190.68 Kbytes Page：4 Pages

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

文件：190.68 Kbytes Page：4 Pages

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

文件：121.07 Kbytes Page：4 Pages

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

文件：121.07 Kbytes Page：4 Pages

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits

NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V