PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

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LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

文件：190.68 Kbytes Page：4 Pages

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

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LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

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NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits