多媒体SoC

丝印代码：S8050Z；TO-92 Plastic-Encapsulate Transistors

FEATURES « Complimentar to S8550 « Collector current: Ic=0.5A

丝印代码：S8050Z；TO-92 Plastic-Encapsulate Transistors

FEATURES « Complimentar to S8550 « Collector current: Ic=0.5A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

■ DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. ■ FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb) - Free

SILICON EPITAXIAL PLANAR TRANS ISTOR

Features ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) Mechanical Data ● Case: SOT-23, Molded Plastic ● Terminals: Solderable per MIL-STD-202, Method 208 ● Polarity: See Diagrams ● Approx. Weight: 0.008

丝印代码：J3Y；Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current..

丝印代码：J3Y；Silicon Epitaxial Planar Transistor

FEATURES High Collector Current.(IC= 500mA). Complementary To S8550. Excellent HFE Linearity. High total power dissipation.(PC=300mW). APPLICATIONS High Collector Current..

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(NPN)

FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

丝印代码：J3Y；High Collector Current

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

Low Frequency Power Amplifier

FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to S8550 与 S8550

Plastic-Encapsulate Transistors

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

丝印代码：J3Y；TRANSISTOR (NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

SOT-23 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

丝印代码：J3Y；Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current..

S OT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

丝印代码：J3Y；High Collector Current

FEATURES High Collector Current.(IC= 500mA). Complementary To S8550. Excellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current.

丝印代码：J3Y；TRANSISTOR(NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR ( NPN ) Features ● Complimentary to S8550 ● Collector Current: IC=0.5A

NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

丝印代码：J3Y；TRANSISTOR(NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR

DESCRIPTION The S 8050 is available in SOT 23 p ackage. FEATURES  High collector current (IC = 500mA)  Excellent hFE Linearity  High total power dissipation. (PC = 300mW)  Available in SOT 23 p ackage APPLICATION  High Collector Current

丝印代码：J3Y；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to S8550

TO-92 Plastic-Encapsulate Transistors

FEATURES « Complimentar to S8550 « Collector current: Ic=0.5A

丝印代码：J3Y；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

丝印代码：J3Y；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

丝印代码：J3Y；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

General Purpose Transistor

FEATURES ● Complimentary to S8550T ● Collector Current: IC = 0.5 A

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

丝印代码：J3Y；Small and medium-sized power amplifier ,medium power drive and switching applications

文件：213.58 Kbytes Page：3 Pages

丝印代码：J3Y；Silicon Epitaxial Planar Transistor

文件：194.58 Kbytes Page：4 Pages

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

文件：414.01 Kbytes Page：2 Pages

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

文件：121.07 Kbytes Page：4 Pages

丝印代码：J3Y；Plastic-Encapsulate Transistors

文件：414.62 Kbytes Page：2 Pages

小信号三极管

晶体管

丝印代码：J3Y；TRANSISTOR

文件：500.53 Kbytes Page：2 Pages

丝印代码：J3Y；NPN Plastic-Encapsulate Transistors

文件：685.66 Kbytes Page：5 Pages