多媒体SoC

New generation value-line multimedia SoC for the 1080p FHD market, S805 is designed to enable all kinds of exciting user experiences with its high performance quad-core CPU and GPU. It delivers immersive theatre-level home entertainment using special audio and video processing hardware. S805 is a pe • CPU\r\n• GPU\r\n• Video Processing\r\n• Video Interface\r\n• Audio Interface\r\n• Security\r\n• Ethernet\r\n• IP License(Optional)\r\n• Process\r\n - 28nm HKMG;

丝印代码：S8050Z；TO-92 Plastic-Encapsulate Transistors

FEATURES « Complimentar to S8550 « Collector current: Ic=0.5A

丝印代码：S8050Z；TO-92 Plastic-Encapsulate Transistors

FEATURES « Complimentar to S8550 « Collector current: Ic=0.5A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050B；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：S8050C；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050C；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：S8050D；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

丝印代码：S8050D；NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

■ DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. ■ FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550

NPN Epitaxial Silicon Transistor

Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb) - Free

SOT-23 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

SILICON EPITAXIAL PLANAR TRANS ISTOR

Features ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) Mechanical Data ● Case: SOT-23, Molded Plastic ● Terminals: Solderable per MIL-STD-202, Method 208 ● Polarity: See Diagrams ● Approx. Weight: 0.008

丝印代码：J3Y；Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current..

丝印代码：J3Y；Silicon Epitaxial Planar Transistor

FEATURES High Collector Current.(IC= 500mA). Complementary To S8550. Excellent HFE Linearity. High total power dissipation.(PC=300mW). APPLICATIONS High Collector Current..

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(NPN)

FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

丝印代码：J3Y；High Collector Current

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

Low Frequency Power Amplifier

FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to S8550 与 S8550

TRANSISTOR (NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

丝印代码：J3Y；TRANSISTOR (NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

Plastic-Encapsulate Transistors

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

丝印代码：J3Y；Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S8550. ● Excellent HFE Linearity. ● High total power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current..

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to S8550

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR ( NPN ) Features ● Complimentary to S8550 ● Collector Current: IC=0.5A

NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

丝印代码：J3Y；TRANSISTOR(NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR

DESCRIPTION The S 8050 is available in SOT 23 p ackage. FEATURES  High collector current (IC = 500mA)  Excellent hFE Linearity  High total power dissipation. (PC = 300mW)  Available in SOT 23 p ackage APPLICATION  High Collector Current

丝印代码：J3Y；High Collector Current

FEATURES High Collector Current.(IC= 500mA). Complementary To S8550. Excellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current.

丝印代码：J3Y；TRANSISTOR(NPN)

FEATURES Complimentary to S8550 Collector Current: IC=0.5A

丝印代码：J3Y；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

S OT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complimentary to S8550 ● Collector Current: IC=0.5A

TO-92 Plastic-Encapsulate Transistors

FEATURES « Complimentar to S8550 « Collector current: Ic=0.5A

丝印代码：J3Y；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

丝印代码：J3Y；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

丝印代码：J3Y；NPN Transistors

NPN Transistors Features ● Collector Current: IC=0.5A

PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

PLASTIC-ENCAPSULATE TRANSISTORS

TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V

General Purpose Transistor

FEATURES ● Complimentary to S8550T ● Collector Current: IC = 0.5 A

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

丝印代码：J3Y；Small and medium-sized power amplifier ,medium power drive and switching applications

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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

文件：414.01 Kbytes Page：2 Pages

丝印代码：J3Y；Silicon Epitaxial Planar Transistor

文件：194.58 Kbytes Page：4 Pages