位置：首页 > IC中文资料第9676页 > S70GL01GN00
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
S70GL01GN00 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 |   | |
S70GL01GN00 | 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit??Process Technology 文件：1.86489 Mbytes Page：83 Pages | spansionSPANSION 飞索飞索半导体 | | |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit??Process Technology 文件：1.86489 Mbytes Page：83 Pages | spansionSPANSION 飞索飞索半导体 | |
S70GL01GN00产品属性
- 类型
描述
- 型号
S70GL01GN00
- 制造商
SPANSION
- 制造商全称
SPANSION
- 功能描述
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit⑩ Process Technology
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2017+ |
NA |
28562 |
只做原装正品假一赔十! |
||||
Cypress(赛普拉斯) |
2511 |
4505 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
||||
CypressSemiconductorCorp |
19+ |
68000 |
原装正品价格优势 |
||||
SPANSION |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Cypress |
23+ |
64FBGA (11x13) |
8000 |
只做原装现货 |
|||
SPANSION |
23+ |
BGA64 |
50000 |
全新原装正品现货,支持订货 |
|||
SPANSION |
21+ |
BGA |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
Cypress |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
CYPRESS SEMICONDUCTOR |
两年内 |
N/A |
2388 |
原装现货,实单价格可谈 |
|||
SPANSION |
2023+ |
BGA |
6893 |
十五年行业诚信经营,专注全新正品 |
S70GL01GN00芯片相关品牌
S70GL01GN00规格书下载地址
S70GL01GN00参数引脚图相关
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S70GL01GN00数据表相关新闻
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说明 这一系列固定电压的单片集成电路电压调节器是专为广泛的应用。这些应用包括卡上消除监管噪音和分配问题与单点的监管。此外，他们可用于电通元素，使高电流的稳压器。每个这些稳压器能够提供的输出电流百毫安。内部限制和这些稳压器的热关断功能，使他们基本上不受超载。当齐纳二极管，电阻器的替代品使用，有效连同情人偏置电流可改善输出阻抗。 特点 •3端稳压器 •输出电流高达100mA •没有外部元件 •内部热过载保护 •内部短路限制
2013-1-13
DdatasheetPDF页码索引
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