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S70G价格
参考价格：￥99.5278
型号：S70GL02GS11FHI010 品牌：Spansion 备注：这里有S70G多少钱，2025年最近7天走势，今日出价，今日竞价，S70G批发/采购报价，S70G行情走势销售排行榜，S70G报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
S70G | 封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：DIODE GEN PURP 400V 70A DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC |   | |
S70G | Silicon Standard Recovery Diode 文件：630.47 Kbytes Page：3 Pages | GENESIC | | |
S70G | Silicon Standard Recovery Diode 文件：646.09 Kbytes Page：3 Pages | GENESIC | | |
S70G | Silicon Standard Recovery Diode 文件：804.59 Kbytes Page：3 Pages | GENESIC | | |
Highest Flux BLUE Features • Highest Flux BLUE • High reliability and Very long operating life (up to 100K hours) • Low voltage DC operated • More Energy Efficient than Incandescent and most Halogen lamps • Superior ESD protection Typical Applications • Decorative • Portable(flashlight,bic | HB HB Electronic Components | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | spansionSPANSION 飞索飞索半导体 | |
S70G产品属性
- 类型
描述
- 型号
S70G
- 功能描述
整流器 400V 70A Std. Recovery
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS |
24+ |
FBGA-64 |
935 |
原厂直供,支持账期,免费供样,技术支持 |
|||
CYPRESS(赛普拉斯) |
24+ |
BGA-64 |
6191 |
百分百原装正品,可原型号开票 |
|||
MCC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
SPANSION |
21+ |
BGA |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
CYPRESS |
21+ |
BGA |
1000 |
全新原装 |
|||
CYPRESS |
18+ |
N/A |
12 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CYPRESS SEMICONDUCTOR |
两年内 |
N/A |
2388 |
原装现货,实单价格可谈 |
|||
CYPRESS |
24+ |
BGA64 |
2700 |
大量全新原装正品现货,价格优势 |
|||
Cypress |
24+ |
FBGA64 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
SPANSION |
24+ |
BGA64 |
13500 |
免费送样原盒原包现货一手渠道联系 |
S70G芯片相关品牌
S70G规格书下载地址
S70G参数引脚图相关
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- S70GB7C
- S70FL256P0XMFI001
- S70FL256P0XMFI000
- S70FL256P0XBHI210
- S70FL01GSAGMFI013
- S70FL01GSAGMFI011
- S70FL01GSAGMFI010
- S70FL01GSAGBHIC10
- S70DR
- S70BR
- S70B_16
- S7091-42R
- S7086
- S7082
- S7081-42R
- S7077
- S7076
- S7071-46R
- S7070
- S7067
- S7063
- S7061-42R
- S7056
- S7055
- S7053
- S7052
- S7051-42R
- S7050ETA
- S7050
- S7045
- S7042
- S-7041B
- S7041-42R
- S-7040D
- S7040
- S-701T
- S701C21S2WCQ
- S701C21S207Q
- S7010ETB
- S-7010
- S7007-6
S70G数据表相关新闻
S6J32HELTNSC20000
进口代理
2023-11-24S70GL02GS11FHI013
进口代理
2023-4-11S71KS512SC0BHB000
S71KS512SC0BHB000
2023-3-31S6B-ZR-SM4A-TF(LF)(SN) 针座jst连接器 表面贴装，直角 6 位置 0.059"（1.50mm）
S6B-ZR-SM4A-TF(LF)(SN)，针座连接器，表面贴装连接器
2021-7-30S6B-XH-SM4-TB(LF)(SN) 针座jst连接器 表面贴装
S6B-XH-SM4-TB(LF)(SN)
2021-7-28S78L05-正电压稳压器
说明 这一系列固定电压的单片集成电路电压调节器是专为广泛的应用。这些应用包括卡上消除监管噪音和分配问题与单点的监管。此外，他们可用于电通元素，使高电流的稳压器。每个这些稳压器能够提供的输出电流百毫安。内部限制和这些稳压器的热关断功能，使他们基本上不受超载。当齐纳二极管，电阻器的替代品使用，有效连同情人偏置电流可改善输出阻抗。 特点 •3端稳压器 •输出电流高达100mA •没有外部元件 •内部热过载保护 •内部短路限制
2013-1-13
DdatasheetPDF页码索引
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