S70G价格
参考价格：￥99.5278
型号：S70GL02GS11FHI010 品牌：Spansion 备注：这里有S70G多少钱，2026年最近7天走势，今日出价，今日竞价，S70G批发/采购报价，S70G行情走势销售排行榜，S70G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
S70G | Standard Recovery Rectifiers | NAVITAS 纳微半导体 |   | |
S70G | 封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：DIODE GEN PURP 400V 70A DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC | | |
S70G | Silicon Standard Recovery Diode 文件：630.47 Kbytes Page：3 Pages | GENESIC | | |
S70G | Silicon Standard Recovery Diode 文件：646.09 Kbytes Page：3 Pages | GENESIC | | |
S70G | Silicon Standard Recovery Diode 文件：804.59 Kbytes Page：3 Pages | GENESIC | | |
Highest Flux BLUE Features • Highest Flux BLUE • High reliability and Very long operating life (up to 100K hours) • Low voltage DC operated • More Energy Efficient than Incandescent and most Halogen lamps • Superior ESD protection Typical Applications • Decorative • Portable(flashlight,bic | HB | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology General Description The S70GL01GN00 is a 1024 Mbit, single power supply flash memory device organized as two S29GL512N dies in a single 64-ball Fortified-BGA package. Each S29GL512N die is 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The devices have a 16-bit wide data bus that ca | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | | ||
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S70GL02GP 2-Gigabit Mirrorbit Flash memory device is fabricated on 90 nm process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 32 words/64 byte | SPANSION 飞索 | |
S70G产品属性
- 类型
描述
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
2Gb （256M x 8，128M x 16）
- 访问时间：
110ns
- 存储器接口：
并联
- 电压 - 电源：
3V ~ 3.6V
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
64-LBGA
- 供应商器件封装：
64-FBGA（11x13）
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Cypress |
24+ |
FBGA64 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
SPANSION |
26+ |
BGA64 |
9880 |
只做原装,欢迎来电资询 |
|||
Cypress Semiconductor |
23+ |
NA |
8800 |
只做原装正品现货 |
|||
Infineon |
24+ |
64-LBGA |
30000 |
原厂原装,价格优势,欢迎洽谈! |
|||
CYPRESS |
21+ |
BGA |
3985 |
全新原装鄙视假货 |
|||
Infineon Technologies |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
CYPRESS |
25+ |
BGA64 |
5400 |
只做原装 有挂有货 假一赔十 |
|||
SPANSIO |
26+ |
BGA64 |
46780 |
全新原装现货,假一赔十,支持检测 |
|||
CYPRESS/赛普拉斯 |
2023+ |
BGA64 |
6917 |
代理库存现货供应,正品全新 |
|||
SPANSION |
25+ |
BGA64 |
20000 |
原装 |
S70G规格书下载地址
S70G参数引脚图相关
- sja1000
- sig
- sgm9115
- sg3525
- sd5000
- sd200
- sc2608
- sc2262
- sanken
- sa950
- sa28
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- S7580ZOV581RA1000
- S7580ZOV461RA780
- S7580ZOV151RA360
- S73305-25.000-X-15-R
- S732
- S723
- s7-200
- s7200
- S720
- S71WS128PC0HF3SR3
- S71VS256RD0AHK3L0
- S71VS256RC0AHK4L0
- S71-4-R-BL
- S7139SF
- S71-2L
- S7121-42R
- S711VC1
- S711VB1
- S711VA1
- S711HB1
- S711HA1
- S7111-42R
- S7110PB-HC3
- S7101-42R
- S70YR
- S70VR
- S70V_16
- S70V
- S70QR
- S70NW6C
- S70MR
- S70KR
- S70KG2C
- S70K_16
- S70JR
- S70GY9C
- S70GR2C
- S70GR
- S70GL-P
- S70GL02GS12FHIV20
- S70GL02GS11FHI010
- S70GB7C
- S70FL256P0XMFI001
- S70FL256P0XMFI000
- S70FL256P0XBHI210
- S70FL01GSAGMFI013
- S70FL01GSAGMFI011
- S70FL01GSAGMFI010
- S70FL01GSAGBHIC10
- S70DR
- S70BR
- S70B_16
- S7091-42R
- S7086
- S7082
- S7081-42R
- S7077
- S7076
- S7071-46R
- S7070
- S7067
- S7063
- S7061-42R
- S7056
- S7055
- S7053
- S7052
- S7051-42R
- S7050ETA
- S7050
- S7045
- S7042
- S-7041B
- S7041-42R
- S-7040D
- S7040
- S-701T
- S701C21S2WCQ
- S701C21S207Q
- S7010ETB
- S-7010
- S7007-6
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S6B-XH-SM4-TB(LF)(SN)
2021-7-28S78L05-正电压稳压器
说明 这一系列固定电压的单片集成电路电压调节器是专为广泛的应用。这些应用包括卡上消除监管噪音和分配问题与单点的监管。此外，他们可用于电通元素，使高电流的稳压器。每个这些稳压器能够提供的输出电流百毫安。内部限制和这些稳压器的热关断功能，使他们基本上不受超载。当齐纳二极管，电阻器的替代品使用，有效连同情人偏置电流可改善输出阻抗。 特点 •3端稳压器 •输出电流高达100mA •没有外部元件 •内部热过载保护 •内部短路限制
2013-1-13
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