SiC Schottky Barrier Diode Bare Die

Features 3) Temperature independent switching behavior 2) Negligible recovery time/current 4) High surge current capability 1) Low forward voltage Applications ・Switch Mode Power Supply ・EV Charger ・Uninterruptible Power Supply ・Air Conditioner ・Solar Inverter ・Motor Drive

650V, 20A, Silicon-carbide (SiC) SBD Bare Die

S6508 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation. \n\nFor sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now. • Low forward voltage\n• Negligible recovery time/current\n• Temperature independent switching behavior\n• High surge current capability;

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

DIODE ARRAY CIRCUITS

DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

8 AMP ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION

文件：291.1 Kbytes Page：7 Pages

CYLINDER MOTOR CONTROL DRIVER IC FOR VTR MOVIE

文件：649.58 Kbytes Page：18 Pages

3-band mixer/oscillator and PLL for terrestrial tuners

文件：274.44 Kbytes Page：42 Pages

Integrated Circuit CMOS, 1K Static RAM (SRAM)