N-channel SiC power MOSFET bare die

● Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive ● Application ・Switch mode power supplies ・Induction heating ・Solar inverters ・DC/DC converters ・Motor drives

N-channel SiC power MOSFET bare die

● Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive ● Application ・Motor drives ・Switch mode power supplies ・Induction heating ・Solar inverters ・DC/DC converters

N-channel SiC power MOSFET bare

● Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive ● Application ・Motor drives ・Switch mode power supplies ・Induction heating ・Solar inverters ・DC/DC converters

Best in class performance, reliability and serviceability for HPC and Datacenter applications

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Best in class performance, reliability and serviceability for HPC and Datacenter applications

文件：1.75886 Mbytes Page：2 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：1.23301 Mbytes Page：14 Pages

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

Square Type

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Square Type

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ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

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