型号 功能描述 生产厂家 企业 LOGO 操作
S29GL512N

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

S29GL512N

512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit

文件:2.02766 Mbytes Page:92 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

S29GL512N

512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit

Infineon

英飞凌

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansion

飞索

S29GL512N产品属性

  • 类型

    描述

  • 型号

    S29GL512N

  • 制造商

    Spansion

  • 功能描述

    512M FLASH MEMORY 3V SPI 29GL512

更新时间:2026-1-1 17:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SPANSIO
25+
BGA
15000
只做进口原装假一罚百
SPANSIO
TSOP-56
3200
代理旗下分销产品,原装正品!
CYPRESS(赛普拉斯)
24+
BGA-64
907
特价优势库存质量保证稳定供货
CYPRESS(赛普拉斯)
24+
BGA-64
5063
百分百原装正品,可原型号开票
SPANSION
2025+
TSSOP
5000
原装进口,免费送样品!
SPANSION原装正品专卖
NEW
BGA
21170
全新原装正品,价格优势,长期供应,量大可订
NEC
23+
DO-214AC
8800
只做原装正品现货
CYPRESS/赛普拉斯
25+
原装
32000
CYPRESS/赛普拉斯全新特价S29GL512N10TFI01即刻询购立享优惠#长期有货
Infineon Technologies
2年内批号
64-FBGA(13x11)
4800
只供原装进口公司现货+可订货
SPANSLON
13+
TSS0P56
332
原装正品 可含税交易

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