S29GL256N价格

参考价格:¥117.4088

型号:S29GL256N10TFI> 品牌:Spansion 备注:这里有S29GL256N多少钱,2025年最近7天走势,今日出价,今日竞价,S29GL256N批发/采购报价,S29GL256N行情走势销售排行榜,S29GL256N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
S29GL256N

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

S29GL256N

512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit

文件:2.02766 Mbytes Page:92 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

MirrorBit Flash Family

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

spansionSPANSION

飞索飞索半导体

S29GL256N产品属性

  • 类型

    描述

  • 型号

    S29GL256N

  • 制造商

    Spansion

更新时间:2025-9-27 10:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SPANSION
24+
BGA
35200
一级代理/放心采购
Cypress
24+
N/A
754
原装原装原装
SPANSION
2021+
TSOP-56
9450
原装现货。
Cypress
25+
30000
原装现货,支持实单
SPANSION
24+
BGA
1307
Spansion
1225+
BGA
508
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Cypress Semiconductor Corp
25+
64-LBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
SPAN
19+
TSOP
9000
SPANSION
25+
TSOP
6500
十七年专营原装现货一手货源,样品免费送
SPANSION
TSSOP
4200
绝对全新原装!优势供货渠道!特价!请放心订购!

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