型号 功能描述 生产厂家 企业 LOGO 操作
S29GL256M

256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 關m MirrorBit Process Technology

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology General Description The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL

spansion

飞索

S29GL256M

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

文件:5.01286 Mbytes Page:160 Pages

spansion

飞索

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

ISSI

矽成半导体

256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

文件:1.04573 Mbytes Page:57 Pages

EON

宜扬科技

256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

文件:1.05992 Mbytes Page:57 Pages

EON

宜扬科技

16-word/32-byte page read buffer

文件:1.62029 Mbytes Page:70 Pages

ISSI

矽成半导体

SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:1.38168 Mbytes Page:76 Pages

MCNIX

????????????旺宏电子

S29GL256M产品属性

  • 类型

    描述

  • 型号

    S29GL256M

  • 制造商

    Spansion

  • 功能描述

    Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 100ns 56-Pin TSOP Tray

更新时间:2025-11-18 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SPANSION
23+
TSOP56
20000
全新原装假一赔十
SPANSION
BGA
25
全新原装进口自己库存优势
SPANSION
23+
NA
869
专做原装正品,假一罚百!
SPANAION
25+
TSSOP
54648
百分百原装现货 实单必成 欢迎询价
SPANSION
25+
BGA
32360
SPANSION全新特价S29GL256M11FAIR10即刻询购立享优惠#长期有货
SPANSION
06+
TSSOP
3957
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SPANSION
24+
BGA
8540
只做原装正品现货或订货假一赔十!
SPANSION
24+
SOP
30617
一级代理全新原装热卖
SPANSION
23+
TSOP
7566
原厂原装
SPANSION
TSSOP
68500
一级代理 原装正品假一罚十价格优势长期供货

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