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型号	功能描述	生产厂家企业	LOGO
S29GL128N10FAI010	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAI012	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAI013	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAI020	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAI022	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAI023	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAIV10	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAIV12	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAIV13	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAIV20	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAIV22	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FAIV23	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFI010	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFI012	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFI013	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFI020	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFI022	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFI023	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFIV10	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFIV12	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFIV13	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFIV20	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFIV22	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFIV23	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAI010	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAI012	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAI013	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAI020	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAI022	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAI023	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAIV10	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAIV12	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAIV13	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAIV20	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAIV22	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TAIV23	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFI010	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFI012	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFI013	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFI020	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFI022	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFI023	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFIV10	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFIV12	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFIV13	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFIV20	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFIV22	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10TFIV23	3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5	spansion 飞索	spansion
S29GL128N10FFI010	封装/外壳：64-LBGA 包装：卷带（TR）描述：FLASH - NOR MEMORY IC 128MB (16M 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL128N10FFI010	封装/外壳：64-LBGA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC FLASH 128MBIT PARALLEL 64FBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL128N10FFI013	Memories for Embedded Systems - Parallel NOR Flash Memory - 32Mb – 2Gb 3.0V High Performance, Parallel Page Mode (GL) Flash Memory -	Infineon 英飞凌	Infineon
S29GL128N10FFI020	Memories for Embedded Systems - Parallel NOR Flash Memory - 32Mb – 2Gb 3.0V High Performance, Parallel Page Mode (GL) Flash Memory -	Infineon 英飞凌	Infineon
S29GL128N10TFI01	512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit 文件：2.02766 Mbytes Page：92 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL128N10TFI010	32Mb – 2Gb 3.0V High Performance Parallel NOR Flash	Infineon 英飞凌	Infineon

S29GL128N10产品属性

类型
描述
型号
S29GL128N10
制造商
Spansion
功能描述
NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
制造商
Spansion
功能描述
MIRRORBIT FLASH 128MB SMD 29LV128

S29GL128N10供应商更多...

更新时间：2026-1-4 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	S29GL128N10FFIS10	SPANSIO	24+	NA/	2591	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市科芯源微电子有限公司	S29GL128N10FFIS2	SPANSION	25+	BGA-64	996880	只做原装,欢迎来电资询	询价
深圳市华睿芯科技有限公司	S29GL128N10FFIS1	SPANSION	24+	BGA	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市赛美科科技有限公司	S29GL128N10FFI020	SPANSION		BGA	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市华康联电子科技有限公司	S29GL128N10FFIS2	SPANSION	23+	BGA-64	98900	原厂原装正品现货!!	询价
深圳市星佑电子有限公司	S29GL128N10FFI020E	SP	05+	原厂原装	3654	自己公司全新库存绝对有货	询价
深圳市英科美电子有限公司	S29GL128N10FFIS10	SPANSION	2223+	BGA64	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市明嘉莱科技有限公司	S29GL128N10FFI022	CYPRESS/赛普拉斯	20+	SMD	880000	明嘉莱只做原装正品现货	询价
深圳诚思涵科技有限公司	S29GL128N10FFIS2	SPANSION	16+	BGA	2500	进口原装现货/价格优势!	询价
深圳市科恒伟业电子有限公司	S29GL128N10FFIS10	SAPNSION	2450+	BGA	6540	只做原厂原装正品现货或订货!终端工厂可以申请样品!	询价

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S29GL128N10产品属性

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