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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
S29GL064A | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 |  |   |
S29GL064A | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. T | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | | |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages | spansionSPANSION 飞索飞索半导体 | | |
S29GL064A产品属性
- 类型
描述
- 型号
S29GL064A
- 制造商
Spansion
- 功能描述
FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 100NS 48FBGA - Trays
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPANSION |
24+ |
NA/ |
3871 |
原厂直销,现货供应,账期支持! |
|||
SPANSION/飞索半导体 |
25+ |
TSOP56 |
32360 |
SPANSION/飞索半导体全新特价S29GL064A90TFIR7即刻询购立享优惠#长期有货 |
|||
SPANSION |
2016+ |
BGA |
2440 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SPANSION |
23+ |
TSSOP |
20000 |
全新原装假一赔十 |
|||
SPANSION |
22+ |
TSOP |
100000 |
代理渠道/只做原装/可含税 |
|||
SPANSION |
25+ |
TSSOP56 |
996880 |
只做原装,欢迎来电资询 |
|||
SPANSION |
24+ |
TSSOP48 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SPANSION |
0826+ |
TSSOP |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CYPRESS/赛普拉斯 |
24+ |
TSOP |
20000 |
不忘初芯-只做原装正品 |
|||
SPANSION |
23+ |
NA |
117 |
专做原装正品,假一罚百! |
S29GL064A芯片相关品牌
S29GL064A规格书下载地址
S29GL064A参数引脚图相关
- sgm9115
- sg3525
- sd5000
- sd200
- sc2608
- sc2262
- sanken
- sa950
- sa28
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- S2A_13
- S2A_11
- S2A_10
- S2A_1
- S2A_09
- S2A_07
- S2A_06
- S2A_05
- S29WS-P
- S29WS-N
- S29WS-J
- S29PL-N
- S29PL-J
- S29NS-P
- S29NS-N
- S29NS-J
- S29GL-P
- S29GL-N
- S29GL-M
- S29GL-A
- S29GL064A11TFIR30
- S29GL064A11TFIR20
- S29GL064A11TFIR10
- S29GL064A11TAIR42
- S29GL064A11FFIR30
- S29GL064A11FFIR20
- S29GL064A11FFIR10
- S29GL064A11FAIR52
- S29GL064A11FAIR50
- S29GL064A11BFIR50
- S29GL064A11BFIR30
- S29GL064A11BAIR50
- S29GL064A11BAIR42
- S29GL064A10TFIR40
- S29GL064A10TAIR60
- S29GL064A10TAIR42
- S29GL064A10FFIR30
- S29GL064A10FAIR50
- S29GL064A10FAIR10
- S29GL064A10BAIR30
- S29GL032N90TFI040
- S29GL032N90TFI033
- S29GL032N90TFI030
- S29GL032N90TFI023
- S29GL032N90TFI020
- S29GL032N90TFI013
- S29GL032N90TFI012
- S29GL032N90TFI010
- S29GL032N90TAI010
- S29GL032N90FFIS32
- S29GL032N90FFIS30
- S29GL032N90FFIS20
- S29GL032N90FFI042
- S29GL032N90FFI040
- S29GL032N90FFI030
- S29GL032N90FFI020
- S29GL032N90FFI010
- S29GL032N90FAI040
- S29GL032N90FAI030
- S29GL032N90BFI042
- S29CL-J
- S29CD-J
- S29CD-G
- S29AW
- S-2957
- S-29430
- S-2934A
- S2934A
- S-29255
- S-29130
- S-2900A
- S28AW
- S-2864B
- S-2860B
- S2829
- S2818A
- S2818
- S-2817A
- S2815S
- S2815D
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128 Mbit SOIC-8 SPI NOR闪存 , SOIC-8 NOR闪存 , S29GL512N/256N/128N NOR闪存 , USON-8 QPI, SPI NOR闪存 , - 55 C NOR闪存 , 1.95 V 1.65 V NOR闪存
2020-7-8
DdatasheetPDF页码索引
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