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S29GL01GS价格

参考价格：￥53.5135

型号：S29GL01GS10DHA020 品牌：Spansion 备注：这里有S29GL01GS多少钱，2025年最近7天走势，今日出价，今日竞价，S29GL01GS批发/采购报价，S29GL01GS行情走势销售排行榜，S29GL01GS报价。

型号	功能描述	生产厂家企业	LOGO
S29GL01GS	GL-S MirrorBit짰 Eclipse??Flash Non-Volatile Memory Family GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBi	spansion 飞索	spansion
S29GL01GS	GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBi	spansion 飞索	spansion
S29GL01GS	GL-S MirrorBit짰 Eclipse??Flash Non-Volatile Memory Family GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBi	spansion 飞索	spansion
S29GL01GS	128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ flash Parallel, 3.0 V Distinctive characteristics • CMOS 3.0 V core with versatile I/O • 65 nm MIRRORBIT™ Eclipse technology • Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) • Versatile I/O feature - Wide I/O voltage range (VIO): 1.65 V to VCC • ×16 data bus • Asynchronous 32-byte page read • 5	Infineon 英飞凌	Infineon
S29GL01GS	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS	1-Gbit (128 Mbyte) 3.0 V, GL-S Flash Memory	Infineon 英飞凌	Infineon
S29GL01GS	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory 文件：1.57363 Mbytes Page：108 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS_V01	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAA010	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAA013	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAA020	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAA023	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAAV10	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAAV13	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAAV20	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAAV23	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAB010	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAB013	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAB020	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAB023	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DABV10	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DABV13	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DABV20	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DABV23	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAI010	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAI013	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAI020	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAI023	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAIV10	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAIV13	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAIV20	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAIV23	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAV010	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAV013	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAV020	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAV023	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAVV10	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAVV13	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAVV20	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DAVV23	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFA010	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFA013	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFA020	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFA023	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFAV10	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFAV13	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFAV20	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFAV23	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFB010	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFB013	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFB020	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFB023	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFBV10	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFBV13	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFBV20	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFBV23	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFI010	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFI013	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFI020	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a m	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
S29GL01GS10DFI020	GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBi	spansion 飞索	spansion

S29GL01GS产品属性

类型
描述
型号
S29GL01GS
制造商
SPANSION
制造商全称
SPANSION
功能描述
GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family

S29GL01GS供应商更多...

更新时间：2025-11-2 9:31:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	S29GL01GS11TFI010	MICRCOHIP	21+	TSOP56	20000	全新原装公司现货价优	询价
深圳市润联芯城科技有限公司	S29GL01GS11FHB02	SPANSION	23+	BGA	50000	只做原装正品	询价
深圳市芯为科技有限公司	S29GL01GS10SFI020	Cypress	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
贸泽芯城（深圳）电子科技有限公司	S29GL01GS12TFIV1	SPANSIO	23+	TSOP56	22486	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市赛美科科技有限公司	S29GL01GS11TFI02	SPANSION		TSOP-56	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市星宇佳科技有限公司	S29GL01GS11TFIV10	CYPRESS/赛普拉斯	1909+	TSOP-56	528		询价
深圳市英卓尔科技有限公司	S29GL01GS12DHVV13	CYPRESS	2025+	N/A	2000	原装原厂发货7-15工作日	询价
深圳市中远芯科技有限公司	S29GL01GS11TFV02	SPANSION	17+15+	TSSOP56	1847	原装现货	询价
深圳市中联芯电子有限公司	S29GL01GS10TF1010	SPANSIO	24+	SOP	1820	市场最低原装现货假一罚百可开原型号	询价
深圳市索歌特科技有限公司	S29GL01GS10TFI010	CYPRESS	23+		10389	绝对原装正品/真实库存/绝无虚假/支持送货	询价

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2020-7-8

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S29GL01GS价格

S29GL01GS产品属性

S29GL01GS供应商更多...

S29GL01GS芯片相关品牌

S29GL01GS规格书下载地址

S29GL01GS参数引脚图相关

S29GL01GS数据表相关新闻

S29GL01GP11FFIR10原装价格超低

S25FL512SAGMFI010

S29GL128S90DHI020

S29GL512P10TFIR10D

S29GL256S10FHIV10存储器

S29AL032D90TFI04

DdatasheetPDF页码索引