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型号	功能描述	生产厂家&企业	LOGO
S29GL016A	64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 文件：3.59086 Mbytes Page：95 Pages	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAER10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAER12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAER13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAER20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAER22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAER23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAIR10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAIR12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAIR13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAIR20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAIR22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BAIR23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFER10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFER12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFER13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFER20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFER22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFER23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFIR10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFIR12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFIR13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFIR20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFIR22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10BFIR23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAER10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAER12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAER13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAER20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAER22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAER23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAIR10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAIR12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAIR13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAIR20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAIR22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FAIR23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFER10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFER12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFER13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFER20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFER22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFER23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFIR10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFIR12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFIR13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFIR20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFIR22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10FFIR23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAER10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAER12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAER13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAER20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAER22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAER23	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAIR10	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAIR12	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAIR13	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAIR20	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion
S29GL016A10TAIR22	S29GL-A MirrorBit Flash Family General Description The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes. Distinctive Characteristics Architectural Advantages Single power	spansionSPANSION 飞索飞索半导体	spansion

S29GL016A产品属性

类型
描述
型号
S29GL016A
制造商
SPANSION
制造商全称
SPANSION
功能描述
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology

S29GL016A供应商更多...

更新时间：2025-8-16 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	S29GL016A90TFIR10	SPANSION	24+	NA/	4104	原厂直销,现货供应,账期支持!	询价
深圳市凌旭科技有限公司	S29GL016A90FFIR10	SPANSION	2016+	BGA	14491	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市威雅利发展有限公司	S29GL016A90TFIR2	SPANSION	06+	TSOP	25	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市科芯源微电子有限公司	S29GL016A10TFI010	SPANSION	25+	BGA	65428	百分百原装现货实单必成	询价
瀚佳科技(深圳)有限公司	S29GL016A90TFIR2	SPANSION	24+	TSOP48	35200	一级代理/放心采购	询价
深圳市能元时代电子有限公司	S29GL016A90TFIR20H	SPANSION	23+	TSOP48	12800	公司只有原装欢迎来电咨询。	询价
深圳市汇莱威科技有限公司	S29GL016A90FFIR20	Spansion	24+	BGA	23000	免费送样原盒原包现货一手渠道联系	询价
深圳市明嘉莱科技有限公司	S29GL016A10TFI010	SPANSION	08+	TSOP48	880000	明嘉莱只做原装正品现货	询价
深圳市华斯顿科技有限公司	S29GL016A90TFIR10	SPANSION	25+23+	TSOP	17500	绝对原装正品全新进口深圳现货	询价
深圳市恒达亿科技有限公司	S29GL016A10BFIW10	SPANSION	25+	BGA	4500	全新原装、诚信经营、公司现货销售!	询价

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S29GL256S10FHIV10 存储器IC XC4VFX12-11FFG668C XC4VFX12-11FFG668I XC4VFX12-10SFG363C XC4VFX12-10SFG363I XC4VFX12-11SFG363C XC4VFX12-11SFG363 XC4VLX15-10SFG363C XC4VLX15-10SFG363I XC4VLX15-11SFG363C XC4VLX15-11SFG363I XC4VLX25-10SFG363C XC4VLX25-10SFG363I XC4VLX25-11SFG363C
2021-7-13
S29AL032D90TFI04
128 Mbit SOIC-8 SPI NOR闪存 , SOIC-8 NOR闪存 , S29GL512N/256N/128N NOR闪存 , USON-8 QPI, SPI NOR闪存 , - 55 C NOR闪存 , 1.95 V 1.65 V NOR闪存
2020-7-8

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DdatasheetPDF页码索引