包装：散装 描述：PLIER/CUTTER 工具 钢丝钳

手机及移动终端射频前端

S2916是一款传输和接收前端模块（FEM），支持四波段GSM/GPRS/EDGE、TD-SCDMA B34/B39和TDD-LTE B39频率波段。S2916还提供了14个高线性/低插入损耗TRx端口，用于3G/4G射频前端解决方案。 GSM、GPRS和边缘传输\n\n兼容TD-SCDMA\n\n兼容TD-HSDPA和TD-HSPA +\n\n兼容TDD-LTE Band39\n\n十四个高线性TRx开关端口\n\n高效率的Pout\n\n输入/输出射频端口在内部匹配到50负载\n\n集成定向耦合器\n\nMIPI RFFE数字控制\n\n支持线性或VRAMP可控输出\n\n射频输入可切换到3g/4g路径\n\n天线端口拥有8千伏的静电保护\n\n小型低背四边扁平封装：5.50x5.30x0.9mm, 38-Pin;

蜂窝射频前端

S2916-51是一款基于慧智微PA技术平台AgiPAMTM的高集成射频前端芯片，芯片集成了2路GSM PA及SP16T开关等器件，支持高功率的信号接收和发射。 集成高性能PA支持2G/3G/4G\n\n集成SP16T高性能、低插损天线开关\n\n集成IEC保护电路\n\n支持MIPI RFFE V2.1控制协议\n\n支持频段\n\nQuad-Band GSM/GPRS/EDGE 、B34/39 TDS/TD-LTE\n\n尺寸\n\n5.5mm x 5.3mm x 0.8mm(max.);

包装：散装 描述：PLIER/CUTTER 工具 钢丝钳

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Silicon Complementary Transistors Medium Power Amp, Switch

Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fide