移动存储芯片：存储卡控制器（SD/MMC/CF）

超小型晶体三极管

S2829是一款高灵敏度光敏晶体三极管，模塑进屏蔽可见光的塑料封装中 。 \n- 带透镜的小型塑料封装\n- 封装屏蔽可见光\n- 高灵敏度：1 mA (1000 lx);

Miniature Circuit Breaker Lockout - Pin Out Standard

Description: Design ● Safe and effective method for locking out miniature circuit breakers ● Require no tools to install! Easily installs with the aid of a push button ● Recommended to lock with lightweight Brady Compact Safety Padlocks, and can accept up to 9/32 shackle diameter ● Made of a

Miniature Circuit Breaker Lockout - Pin Out Standard

Description: Design ● Safe and effective method for locking out miniature circuit breakers ● Require no tools to install! Easily installs with the aid of a push button ● Recommended to lock with lightweight Brady Compact Safety Padlocks, and can accept up to 9/32 shackle diameter ● Made of a

Miniature Circuit Breaker Lockout - Pin Out Standard

Description: Design ● Safe and effective method for locking out miniature circuit breakers ● Require no tools to install! Easily installs with the aid of a push button ● Recommended to lock with lightweight Brady Compact Safety Padlocks, and can accept up to 9/32 shackle diameter ● Made of a

Miniature Circuit Breaker Lockout - Pin Out Standard

Description: Design ● Safe and effective method for locking out miniature circuit breakers ● Require no tools to install! Easily installs with the aid of a push button ● Recommended to lock with lightweight Brady Compact Safety Padlocks, and can accept up to 9/32 shackle diameter ● Made of a

包装：散装 描述：THERMAL PAD, SHEET 160X160MM, TH 风扇，热管理 热 - 垫，片

包装：散装 描述：THERMAL PAD, SHEET 160X160MM, TH 风扇，热管理 热 - 垫，片

Phototransistor Subminiature package phototransistor

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Phototransistor

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LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

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