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S25晶体管资料
S25-12别名:S25-12三极管、S25-12晶体管、S25-12晶体三极管
S25-12生产厂家:
S25-12制作材料:Si-NPN
S25-12性质:
S25-12封装形式:
S25-12极限工作电压:18V
S25-12最大电流允许值:8A
S25-12最大工作频率:<1MHZ或未知
S25-12引脚数:
S25-12最大耗散功率:80W
S25-12放大倍数:
S25-12图片代号:NO
S25-12vtest:18
S25-12htest:999900
- S25-12atest:8
S25-12wtest:80
S25-12代换 S25-12用什么型号代替:3DK108A,
S25价格
参考价格:¥29.7278
型号:S250 品牌:Switchcraft 备注:这里有S25多少钱,2024年最近7天走势,今日出价,今日竞价,S25批发/采购报价,S25行情走势销售排行榜,S25报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
S25 | Schottky Rectifiers Description TheSS22-S210seriesincludeshigh-efficiency,lowpowerloss,general-proposeSchottkyrectifiers.Theclipbondedlegstructureprovideshighthermalperformanceandlowelectricalresistance.Theserectifieraresuitedforfreewheeling,secondaryrectification,andreversepolarit | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
S25 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS [DACOSEMICONDUCTOR] FEATURES: ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ●Forsurfacemountedapplications ●Lowprofilepackage ●Built-instrainrelief ●Metalsiliconjunction,majoritycarrierconduction ●Lowpowerloss,highefficiency ●Highcu | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
S25 | Silicon Power Rectifier 文件:120.01 Kbytes Page:2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | ||
Surface Mount Si-Bridge Rectifiers SurfaceMountSi-BridgeRectifiers •Nominalcurrent0.8A •Alternatinginputvoltage40…500V •Plasticcase4.7x3.9x2.4[mm] •Weightapprox.0.1g •PlasticmaterialhasULclassification94V-0 •Standard | DiotecDIOTEC 德欧泰克 | |||
Surface Mount Si-Bridge Rectifiers SurfaceMountSi-BridgeRectifiers ForwardCurrent:0,8A ReverseVoltage:80to1000V | SemikronSemikron 赛米控 | |||
GLASS PASSIVATED SILICON BRIDGE RECTIFIERS FEATURES ◇Ratingto1000V ◇Lowforwardvoltagedrop ◇Smallsize,plasticcase ◇Glasspassivatedjunction ◇Weight:0.0078ounces,0.22grams ◇Mountingposition:Any | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
VOLTAGE 50V ~ 1000V 0.8AMP Single Phase Surface Mount Bridge Rectifiers FEATURES *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmoldedplastictechnique *Highsurgecurrentcapability *Polarity:Symbolmoldedonbody *Mountingposition:Any *Weight:0.12grams | SECOS SeCoS Halbleitertechnologie GmbH | |||
SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPERFASTRECOVERYDIODE SCHOTTKYDIODE GLASSPASSIVATEDBRIDGERECTIFIER | RFERFE international RFE国际公司RFE国际股份有限公司 | |||
SKINTOP® SLM/SLRM Strain relief with metric thread Applicationadvantage •TheheavydutySKINTOP®designprovidesgreatpullout strengthandveryreliablestrainrelief •Superiorintegratedlockingmechanismincludesaninternal ratchetforvibration-proofprotection •Multi-trapezoidalthreadrequiresjustonetwisttotighten •Generous | LAPP Lapp. | |||
SKINTOP® SLM/SLRM Strain relief with metric thread Applicationadvantage •TheheavydutySKINTOP®designprovidesgreatpullout strengthandveryreliablestrainrelief •Superiorintegratedlockingmechanismincludesaninternal ratchetforvibration-proofprotection •Multi-trapezoidalthreadrequiresjustonetwisttotighten •Generous | LAPP Lapp. | |||
BIDIRECTIONAL TRIODE THYRISTOR BIDIRECTIONALTRIODETHYRISTOR AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
BIDIRECTIONAL TRIODE THYRISTOR BIDIRECTIONALTRIODETHYRISTOR AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
BIDIRECTIONAL TRIODE THYRISTOR BIDIRECTIONALTRIODETHYRISTOR AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
Fast Switching Surface Mount Si-Bridge-Rectifiers FastSwitchingSurfaceMountSi-Bridge-Rectifiers •Nominalcurrent0.8A •Alternatinginputvoltage40...380V •PlasticcaseTO-269AA •Weightapprox.0.1g •PlasticmaterialhasULclassification94V-0 •Standardpac | DiotecDIOTEC 德欧泰克 | |||
Protectifiers - LowVF Bridge Rectifier with Overvoltage Protection Protectifiers®–LowVFBridgeRectifierwithOvervoltageProtection •Nominalcurrent0.8A •Alternatinginputvoltage125V,250V •Plasticcaseslimprofile1.6mmTO-269AA •Weightapprox.0.1 | DiotecDIOTEC 德欧泰克 | |||
BIDIRECTIONAL TRIODE THYRISTOR BIDIRECTIONALTRIODETHYRISTOR AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | |||
SILICON POWER RECTIFIER SiliconPowerRectifier •GlassPassivatedDie •LowForwardVoltage •400ASurgeRating •Glasstometalsealconstruction •VRRMto1600V •Excellentreliability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SILICON POWER RECTIFIER SiliconPowerRectifier •GlassPassivatedDie •LowForwardVoltage •400ASurgeRating •Glasstometalsealconstruction •VRRMto1600V •Excellentreliability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SKINTOP® SLM/SLRM Strain relief with metric thread Applicationadvantage •TheheavydutySKINTOP®designprovidesgreatpullout strengthandveryreliablestrainrelief •Superiorintegratedlockingmechanismincludesaninternal ratchetforvibration-proofprotection •Multi-trapezoidalthreadrequiresjustonetwisttotighten •Generous | LAPP Lapp. | |||
SILICON POWER RECTIFIER SiliconPowerRectifier •GlassPassivatedDie •LowForwardVoltage •400ASurgeRating •Glasstometalsealconstruction •VRRMto1600V •Excellentreliability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SCR DESCRIPTION TheS25xxxHseriesofSCRsusesahighperformanceMESAGLASSPNPNtechnology.Thesepartsareintendedforgeneralpurposeapplications. FEATURES ■IT(RMS)=25A ■VDRM=200Vto800V ■Highsurgecurrentcapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCR DESCRIPTION TheS25xxxHseriesofSCRsusesahighperformanceMESAGLASSPNPNtechnology.Thesepartsareintendedforgeneralpurposeapplications. FEATURES ■IT(RMS)=25A ■VDRM=200Vto800V ■Highsurgecurrentcapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCR DESCRIPTION TheS25xxxHseriesofSCRsusesahighperformanceMESAGLASSPNPNtechnology.Thesepartsareintendedforgeneralpurposeapplications. FEATURES ■IT(RMS)=25A ■VDRM=200Vto800V ■Highsurgecurrentcapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCR DESCRIPTION TheS25xxxHseriesofSCRsusesahighperformanceMESAGLASSPNPNtechnology.Thesepartsareintendedforgeneralpurposeapplications. FEATURES ■IT(RMS)=25A ■VDRM=200Vto800V ■Highsurgecurrentcapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SKINTOP® SLM/SLRM Strain relief with metric thread Applicationadvantage •TheheavydutySKINTOP®designprovidesgreatpullout strengthandveryreliablestrainrelief •Superiorintegratedlockingmechanismincludesaninternal ratchetforvibration-proofprotection •Multi-trapezoidalthreadrequiresjustonetwisttotighten •Generous | LAPP Lapp. | |||
SILICON POWER RECTIFIER SiliconPowerRectifier •GlassPassivatedDie •LowForwardVoltage •400ASurgeRating •Glasstometalsealconstruction •VRRMto1600V •Excellentreliability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SCR DESCRIPTION TheS25xxxHseriesofSCRsusesahighperformanceMESAGLASSPNPNtechnology.Thesepartsareintendedforgeneralpurposeapplications. FEATURES ■IT(RMS)=25A ■VDRM=200Vto800V ■Highsurgecurrentcapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCR DESCRIPTION TheS25xxxHseriesofSCRsusesahighperformanceMESAGLASSPNPNtechnology.Thesepartsareintendedforgeneralpurposeapplications. FEATURES ■IT(RMS)=25A ■VDRM=200Vto800V ■Highsurgecurrentcapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCR DESCRIPTION TheS25xxxHseriesofSCRsusesahighperformanceMESAGLASSPNPNtechnology.Thesepartsareintendedforgeneralpurposeapplications. FEATURES ■IT(RMS)=25A ■VDRM=200Vto800V ■Highsurgecurrentcapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCR DESCRIPTION TheS25xxxHseriesofSCRsusesahighperformanceMESAGLASSPNPNtechnology.Thesepartsareintendedforgeneralpurposeapplications. FEATURES ■IT(RMS)=25A ■VDRM=200Vto800V ■Highsurgecurrentcapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SILICON POWER RECTIFIER SiliconPowerRectifier •GlassPassivatedDie •LowForwardVoltage •400ASurgeRating •Glasstometalsealconstruction •VRRMto1600V •Excellentreliability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SKINTOP® SLM/SLRM Strain relief with metric thread Applicationadvantage •TheheavydutySKINTOP®designprovidesgreatpullout strengthandveryreliablestrainrelief •Superiorintegratedlockingmechanismincludesaninternal ratchetforvibration-proofprotection •Multi-trapezoidalthreadrequiresjustonetwisttotighten •Generous | LAPP Lapp. | |||
SKINTOP® SLM/SLRM Strain relief with metric thread Applicationadvantage •TheheavydutySKINTOP®designprovidesgreatpullout strengthandveryreliablestrainrelief •Superiorintegratedlockingmechanismincludesaninternal ratchetforvibration-proofprotection •Multi-trapezoidalthreadrequiresjustonetwisttotighten •Generous | LAPP Lapp. | |||
SKINTOP® SLM/SLRM Strain relief with metric thread Applicationadvantage •TheheavydutySKINTOP®designprovidesgreatpullout strengthandveryreliablestrainrelief •Superiorintegratedlockingmechanismincludesaninternal ratchetforvibration-proofprotection •Multi-trapezoidalthreadrequiresjustonetwisttotighten •Generous | LAPP Lapp. | |||
SILICON POWER RECTIFIER SiliconPowerRectifier •GlassPassivatedDie •LowForwardVoltage •400ASurgeRating •Glasstometalsealconstruction •VRRMto1600V •Excellentreliability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SKINTOP® SLM/SLRM Strain relief with metric thread Applicationadvantage •TheheavydutySKINTOP®designprovidesgreatpullout strengthandveryreliablestrainrelief •Superiorintegratedlockingmechanismincludesaninternal ratchetforvibration-proofprotection •Multi-trapezoidalthreadrequiresjustonetwisttotighten •Generous | LAPP Lapp. | |||
SILICON POWER RECTIFIER SiliconPowerRectifier •GlassPassivatedDie •LowForwardVoltage •400ASurgeRating •Glasstometalsealconstruction •VRRMto1600V •Excellentreliability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SILICON POWER RECTIFIER SiliconPowerRectifier •GlassPassivatedDie •LowForwardVoltage •400ASurgeRating •Glasstometalsealconstruction •VRRMto1600V •Excellentreliability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SCHOTTKY BARRIER RECTIFIERS(25A,30-60V)
| MOSPEC MOSPEC | |||
SCHOTTKY BARRIER RECTIFIERS(25A,30-60V)
| MOSPEC MOSPEC | |||
SCHOTTKY BARRIER RECTIFIERS(25A,30-60V)
| MOSPEC MOSPEC | |||
SCHOTTKY BARRIER RECTIFIERS(25A,30-60V)
| MOSPEC MOSPEC | |||
Schottky Rectifier ■Features ●Io2.0A ●VRRM20V~200V ●LowVF,Lowpowerloss ●Highsurgeforwardcurrentcapability ■Applications ●Rectifier | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | |||
Surface Mount Schottky Rectifiers Features Lowprofilepackage Idealforautomatedplacement Guardringforovervoltageprotection Lowpowerlosses,highefficiency Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C | RFERFE international RFE国际公司RFE国际股份有限公司 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus GeneralDescription TheS25FL016Aisa3.0Volt(2.7Vto3.6V),single-power-supplyFlashmemorydevice.Thedeviceconsistsofthirty-twosectors,eachwith512Kbmemory. ThedeviceacceptsdatawrittentoSI(SerialInput)andoutputsdataonSO(SerialOutput).Thedevicesaredesigned | spansionSPANSION 飞索飞索半导体 |
S25产品属性
- 类型
描述
- 型号
S25
- 制造商
Panasonic Industrial Company
- 功能描述
DPNO/DPNC relay,4A 5Vdc coil
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SPANSION |
23+ |
5000 |
原装现货 本公司为一般纳税人,可开17%增值税票 |
||||
SPANSION |
17+ |
SOP-8 |
24291 |
只做原装/假一赔百 |
|||
CYPRESS(赛普拉斯) |
23+ |
TBGA-24 |
19609 |
正规渠道,大量现货,只等你来。 |
|||
SPANSION |
15+ |
SOP16 |
9550 |
专营进口原装假一赔十价格优势 |
|||
SPANSION |
SOP-16 |
1850 |
只做原装假一赔十,公司现货 |
||||
CYPRESS |
19+ |
SOP-16 |
6000 |
原装现货,特价供应 |
|||
SPANSION |
2021+ |
SOP8 |
16800 |
全新原装正品,自家优势现货 |
|||
SPANSION |
12+ |
SOP8 |
3 |
只做原装,可开13个点税票 |
|||
CYPRESS |
22+ |
SOP8 |
2100 |
青岛现货,原装正品,实单来谈 |
|||
RAMTRON |
20+ |
SOP14 |
10600 |
合理报价,正品原装,假一罚万 |
S25规格书下载地址
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WSON-8NOR闪存,1GbitAEC-Q100NOR闪存,SPISMD/SMTNOR闪存,4MbitNORNOR闪存,SOP-16NOR闪存,512MbitWDFN-8SPINOR闪存
2020-6-12S24SE15002PDFA进口原装现货DELTA
代理分销P-DUKE.XP-POWER.VICOR.MINMAX.MEANWELL.TRACO.COSEL.MORNSUN,DELTA.TDK一系列DC-DC/AC-DC电源转换器,产品广泛用于医疗设备.轨道交通.军事设备.工控设备等领域。联系人:刘小姐:13510619928/微信同号,QQ:3171516190
2020-4-8
DdatasheetPDF页码索引
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