Si APD Low bias operation, for 800 nm band

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Low bias operation, for 800 nm band

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Low bias operation, for 800 nm band

Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: • Silicon Gate for Fast Switch

PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2381 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Ar

PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2381 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Ar

Precision, Low Power, 18MHz Transimpedance Amplifier

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FAMILY OF MICROPOWER RAIL-TO-RAIL INPUT AND OUTPUT OPERATIONAL AMPLIFIERS

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